Dielectric characteristics of AlN films grown by d.c.-magnetron sputtering discharge

Oliveira, I. C.; Massi, M.; Santos, Sebastiao G. Dos; Otani, C.; Maciel, Homero Santiago; Mansano, Ronaldo Domingues

doi:10.1016/s0925-9635(00)00596-3

Cited by 24 publications

(12 citation statements)

References 8 publications

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“…INTRODUCTION 1 ecent experiments indicate that aluminum nitride (AlN) can be used as an insulator of integrated circuits [1,2]. AlN has a large direct band gap of 6.2 eV, high thermal conductivity (up to 320 Wm -1 ) high decomposition temperature (2700 K).…”

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confidence: 99%

Correlation Between Optical, Morphological, and Compositional Properties of Aluminum Nitride Thin Films by Pulsed Laser Deposition

2016

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AlN thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed laser ablation. We have varied the substrate temperature for the thin film growth, using X-ray Reflectometry (XRR) analysis, we have characterized the thickness and density of the thin layer and the interface roughness from the X-ray reflectivity profiles. Experimental data showed that the root-mean-square roughness was in the range of 0.3 nm. X-ray photoelectron spectroscopy (XPS) was employed to characterize the chemical composition of the films. These measurements detected carbon and oxygen contamination at the surface. In the highresolution X-ray photoelectron spectroscopy Al2p data, binding energies for Al-N and Al-O species were identified but no Al-Al species were present. In the N1s data, N-O species were not detected, but chemically bonded O was present in the films as Al-O species. Furthermore the value of optical energy gap, Eg was about 5.3 (± 0.1) eV. The composition varied with process conditions, and the nitrogen content decreased in AlN films processed above 500°C.

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confidence: 99%

Correlation Between Optical, Morphological, and Compositional Properties of Aluminum Nitride Thin Films by Pulsed Laser Deposition

2016

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“…21 and RF magnetron sputtering. 22 The value reported herein (i.e., 6.4 Â 10 11 cm À2 ) is therefore better than those reported in the literature for AlN thin films deposited using various methods and suggests that AlN thin films with low effective charge densities can be deposited successfully using low-temperature PEALD.…”

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confidence: 99%

Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

Altuntaş

Özgit-Akgün

Dönmez

et al. 2015

Journal of Applied Physics

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Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200°C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the deposited AlN was carried out using grazing-incidence X-ray diffraction, revealing polycrystalline films with a wurtzite (hexagonal) structure. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor structures were fabricated and investigated under negative bias by performing current-voltage measurements. As a function of the applied electric field, different types of current transport mechanisms were observed; i.e., ohmic conduction (15.2-21.5 MV/m), Schottky emission (23.6-39.5 MV/m), Frenkel-Poole emission (63.8-211.8 MV/m), trap-assisted tunneling (226-280 MV/m), and Fowler-Nordheim tunneling (290-447 MV/m). Electrical properties of the insulating AlN layer and the fabricated Al/AlN/p-Si MIS capacitor structure such as dielectric constant, flat-band voltage, effective charge density, and threshold voltage were also determined from the capacitance-voltage measurements. © 2015 AIP Publishing LLC

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“…An example is the semi insulating polycristaline silicon (SIPOS) that can be used to increase the breakdown voltage without increasing the on state series resistance [1][2][3]. In this case, the potential drop across the SIPOS layer is controlled by the charging properties of the SIPOS layer due to high concentrations of electron states.…”

Section: Imentioning

confidence: 99%

Leakage modeling of AlHfO<inf>3.5</inf> semi-insulating dielectrics for power devices

Christiano

Sonnenberg

Santos

2013

28th Symposium on Microelectronics Technology and Devices (SBMicro 2013)

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Electrical characterization of hafnium aluminates gate dielectrics, using capacitance-voltage (C-V) measurements, was carried out for different frequencies. The dielectric film was deposited with equal molar concentrations of aluminum and hafnium (AlHf03.5) in order to analyze the influence of aluminum in the AlHfOy system at high concentrations. In addition, the AIHf03.5 film was annealed at 1000°C for 60s to simulate the thermal budget during a conventional CMOS processing. C-V measurements were performed in darkness and under illumination, having as a result a high-frequency behavior of the minority carriers already from 1 kHz under illumination. Also, flat band voltage (VFB) was greater than or equal to zero for all conditions measured. On the other hand, the leakage phenomenaoccurring at the accumulation region, was modeled with a simplified electrical model using a leakage admittance Yc whose influence was predominant at high frequencies (lMHz) in the accumulation region. Using a low frequency to obtain the accumulation capacitance without the influence of Y c and knowing the physical thickness from X-ray reflectometry (XRR), the average permittivity obtained was 6.7±1.6, which is lower than the one reported for alumina (-to) and its achievement is possibly affected by the leakage process.

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Dielectric characteristics of AlN films grown by d.c.-magnetron sputtering discharge

Cited by 24 publications

References 8 publications

Correlation Between Optical, Morphological, and Compositional Properties of Aluminum Nitride Thin Films by Pulsed Laser Deposition

Correlation Between Optical, Morphological, and Compositional Properties of Aluminum Nitride Thin Films by Pulsed Laser Deposition

Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

Leakage modeling of AlHfO<inf>3.5</inf> semi-insulating dielectrics for power devices

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