Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

Altuntaş, H.; Özgit-Akgün, Çaǧla; Dönmez, İnci; Bıyıklı, Necmi

doi:10.1063/1.4917567

Cited by 30 publications

(11 citation statements)

References 26 publications

(20 reference statements)

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“…[201][202][203][204] Interestingly, recent investigations of the electrical properties of sputter deposited and PEALD AlN have also reported electrical leakage to occur predominantly by the PF mechanism. [205][206][207] More recent electrically detected magnetic resonance (EDMR) measurements by Mutch et al have conclusively shown that electron transport in PECVD SiN:H specifically occurs through silicon dangling bond defect states located in the mid-upper portion of the SiN bandgap. 208,209 Owing to the similar IV characteristics, deduced leakage mechanism, and band structure, 210 it seems plausible that electron transport in amorphous AlN (independent of deposition method) may also occur through Al dangling bond defect states.…”

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confidence: 99%

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic devices. While electrical, optical, and interfacial properties have been the primary consideration for such devices, thermal and mechanical properties are becoming an additional key consideration for many new and emerging applications of ALD high-k materials in electromechanical, energy storage, and organic light emitting diode devices. Unfortunately, a clear correspondence between thermal/mechanical and electrical/optical properties in ALD high-k materials has yet to be established, and a detailed comparison to conventional silicon-based dielectrics to facilitate optimal material selection is also lacking. In this regard, we have conducted a comprehensive investigation and review of the thermal, mechanical, electrical, optical, and structural properties for a series of prevalent and emerging ALD high-k materials including aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), hafnium oxide (HfO 2 ), and beryllium oxide (BeO). For comparison, more established silicon-based dielectrics were also examined, including thermally grown silicon dioxide (SiO 2 ) and plasma-enhanced chemically vapor deposited hydrogenated silicon nitride (SiN:H). We find that in addition to exhibiting high values of dielectric permittivity and electrical resistance that exceed those of SiO 2 and SiN:H, the ALD high-k materials exhibit equally exceptional thermal and mechanical properties with coefficients of thermal expansion ≤ 6 × 10 -6 / • C, thermal conductivites (κ) of 3-15 W/m K, and Young's modulus and hardness values exceeding 200 and 25 GPa, respectively. In many cases, the observed extreme thermal/mechanical properties correlate with the presence of crystallinity in the ALD high-k films. In contrast, some of the electrical and optical properties correlate more strongly with the percentage of ionic vs. covalent bonds present in the high-k film. Overall, the ALD high-k dielectrics investigated concurrently exhibit compelling thermal/mechanical and electrical/optical properties. The drive to reduce gate leakage currents in highly scaled complementary metal-oxide-semiconductor (CMOS) transistors has led to the exploration and development of a wide variety of high-dielectricconstant (high-k) materials to replace silicon dioxide (SiO 2 ) as the insulating gate dielectric material.1-8 Many of these same high-k materials have found additional applications in future non-CMOS logic and memory storage products such as solid-state electrolytes in resistive switching devices, 9,10 tunnel barriers in spin-transport devices, 11 and as a ferroelectric in magnetoelectric devices. While electrical, physical, and thermodynamic properties have clearly been a key consideration in all of the above applications, thermal properties have become an additional important consideration for higk-k dielectrics as aggressive dimensional scaling of devices has created the need to dissipate ...

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confidence: 99%

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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“…This indicates that metal–nitrogen and metal–hydride bonds designed into the precursor successfully respectively reduced carbon and oxygen contamination in AlN films. This is especially noteworthy when other processes using TMA and NH 3 plasma have employed plasma pulse lengths of 40 s − to reduce impurities in AlN films.…”

Section: Results and Discussionmentioning

confidence: 54%

Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design

et al. 2021

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A heteroleptic amidoalane precursor is presented as a more suitably designed candidate to replace trimethylaluminum (TMA) for atomic layer deposition of aluminum nitride (AlN). The lack of C−Al bonds and the strongly reducing hydride ligands in [AlH 2 (NMe 2 )] 3 (1) were specifically chosen to limit impurities in target aluminum nitride (AlN) films. Compound 1 is made in a high yield, scalable synthesis involving lithium aluminum hydride and dimethylammonium chloride. It has a vapor pressure of 1 Torr at 40 °C and evaporates with negligible residual mass in thermogravimetric experiments. Ammonia (NH 3 ) plasma and 1 in an atomic layer deposition (ALD) process produced crystalline AlN films above 200 °C with an Al:N ratio of 1.04. Carbon and oxygen impurities in resultant AlN films were reduced to <1% and <2%, respectively. By using a precursor with a rational and advantageous design, we can improve the material quality of AlN films compared to those deposited using the industrial standard trimethylaluminum and could reduce material cost by up to 2 orders of magnitude.

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“…This indicates that metal-nitrogen and metal-hydride bonds designed into the precursor successfully respectively reduced carbon and oxygen contamination in AlN films. This is especially noteworthy when other processes using TMA and NH3 plasma have employed plasma pulse lengths of 40 seconds [15][16][17][18] in order to reduce impurities in AlN films.…”

Section: Resultsmentioning

confidence: 99%

Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

Buttera

Rouf²,

Deminskyi³

et al. 2020

Preprint

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Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

Cited by 30 publications

References 26 publications

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design

Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

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