Diamond devices and electrical properties

Fox, Bradley A.; Hartsell, M. L.; Malta, Dean; Wynands, Henry; Kao, Chien-Teh; Plano, Linda S.; Tessmer, G. J.; Henard, R.B.; Holmes, Joseph S.; Tessmer, A.J.; Dreifus, D. L.

doi:10.1016/0925-9635(94)05245-x

Cited by 77 publications

(14 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The effect of φ Bp on the drift carrier concentration justifies the use of N A (i ) = 10 11 cm −3 , where the drift layer is completely depleted by the Schottky anode as p < N A (i ) for y < 10 μm, as would be the case for a completely intrinsic drift layer. In addition, μ p (i) = 3800 cm 2 /V · s while μ p (p + ) ∼ 55 cm 2 /V · s, which agrees with data obtained from material characterization [2], [6], [14].…”

Section: Resultssupporting

confidence: 79%

See 1 more Smart Citation

Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

Rashid

Tajani

Twitchen

et al. 2008

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 79%

“…Concentration-dependent Hall and time-of-flight (TOF) hole mobility μ p values reported [6], [14] for heavily boron-doped p + diamond (with N A > 10 14 cm −3 ) are shown graphically in Fig. 4.…”

Section: Carrier Mobility Dependencesmentioning

confidence: 99%

Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

Rashid

Tajani

Twitchen

et al. 2008

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

“…Since this surface conducting layer has a resistance that varies with the environment [40,41], the stability of the device can be a problem. Dreifuss group [35,36] studied the growth conditions of diamond and obtained the highest room-temperature mobility, 1400 cm 2 V 1 s 1 in gas-phase-synthesized diamond. Dreifuss group [35,36] studied the growth conditions of diamond and obtained the highest room-temperature mobility, 1400 cm 2 V 1 s 1 in gas-phase-synthesized diamond.…”

Section: Development Period (Fabrication Of Improved Fets and Circuitmentioning

confidence: 99%

Crystal growth of diamond and its application for semiconductor devices

Shiomi

1999

Electron. Comm. Jpn. Pt. II

View full text Add to dashboard Cite

Based on the latest experimental results, the on‐resistance of diamond devices is compared with those of other wide‐bandgap semiconductor devices from the power device point of view. From the dynamic temperature dependence of the on‐resistance, the superiority of the diamond device as a majority carrier device is made clear. The history of diamond transistor development is reviewed in order to show how progress in crystal growth was related to the realization of diamond devices with such superior characteristics. Step flow growth using an off‐orientation substrate is introduced as the latest advance in gas‐phase synthesis of diamond. By means of step flow growth, not only is the surface morphology improved, but the repeatability of doping is increased. Progress in this crystal growth technology offers the possibility of further new devices. © 1999 Scripta Technica, Electron Comm Jpn Pt 2, 82(7):68–79, 1999

show abstract

“…Thin-film diamond field effect transistor (FET), which operate in the ultraviolet spectral range are one of the ¿rst forms of optoelectronic devices to be fabricated from this material [2]. Early attempts to fabricate diamond field effect transistor transistor structures from boron-doped (p-type) material were disappointing [3,4]; the recent emergence of hydrogenated diamond as a source of p-type character has changed this [5]. Polycrystalline diamond has been used to build superficial MISFET devices and high-power diodes.…”

Section: Introductionmentioning

confidence: 99%

The electrical properties of the diamond field effect transistor

et al. 2009

View full text Add to dashboard Cite

200 μm thick free-standing polycrystalline diamond film has been grown by microwave plasma chemical vapor deposition (MPCVD) method. The nucleation surface of diamond is characterized by Raman scattering, scanning electron microscopy (SEM) and atomic force microscopy (AFM) method. AFM and SEM results indicate the nucleation surface is quite smooth with a mean surface roughness (RMS) of about 10 nm. Raman scattering result indicates of high quality nucleation diamond film. A diamond field effect transistor is fabricated on hydrogenated diamond nucleation surface, using standard lithographic procedures. Device with aluminum (Al) gate electrode, to form Schottky barrier with diamond, as well as Au source and drain electrodes to form ohmic contact with diamond, operates as effective enhancement-mode metal-semiconductor field-effect transistors at room temperature, showing clear modulation of channel current.

show abstract

Diamond devices and electrical properties

Cited by 77 publications

References 10 publications

Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

Crystal growth of diamond and its application for semiconductor devices

The electrical properties of the diamond field effect transistor

Contact Info

Product

Resources

About