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A comprehensive study on the off-state performance of Cathode -Schottky Contact synthetic single crystal (SSC) diamond Schottky barrier diodes (SBDs) is the subject of this paper. Three termination structures+ suitable for unipolar diamond power devices are numerically Drift Region 8-25pm investigated. Comparisons between the three terminations, based n D on blocking performance and area consumption are presented. Optimum design parameters derived from simulations are included for each structure. Experimental results of reverse-Sltre biased diamond SBDs for the first time with ramp angle P++ Diamond 200-400pm termination are also presented.