On-state behaviour of diamond Schottky diodes

Brezeanu, M.; Butler, T.; Amaratunga, G.A.J.; Udrea, F.; Rupesinghe, N. L.; Rashid, S.J.

doi:10.1016/j.diamond.2007.08.040

Cited by 14 publications

(8 citation statements)

References 14 publications

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“…The high ideality factor is ascribed to surface conductive channels which are induced during the doping process. The current density in the vertical junction diode is 0.07 A/cm 2 at +5 V, which is lower in comparison to diamond Schottky diodes [5][6][7][8] . The low current density is mainly due to the low carrier concentration in the undoped nSCD (see SI for more comparison analysis).…”

Section: Resultsmentioning

confidence: 99%

“…Because of the doping difficulty, the majority of diamond-based diodes reported to date are Schottky diodes [5][6][7][8] .…”

Section: Abstract: With the Best Overall Electronic And Thermal Propementioning

confidence: 99%

“…However, besides the lack of large area single crystalline diamond (SCD) substrate, SCD is ultra-stable and chemically inert to most reactive reagents, due to the strong σ-bonds formed between adjacent carbon atoms, making substitutional doping very difficult 4 . Because of the doping difficulty, the majority of diamond-based diodes reported to date are Schottky diodes [5][6][7][8] .…”

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confidence: 99%

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Thermal diffusion boron doping of single-crystal natural diamond

Seo

Mikael

et al. 2016

Journal of Applied Physics

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Abstract:With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occur at the bonded interface between Si and diamond.We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.With the advent of various new renewable energy sources and the emerging need to deliver and convert energy more efficiently, power electronics have received unprecedented attention in recent years. For the last several decades, Si-based power devices have played a dominant role in power conversion electronics. Wide bandgap semiconductor material based power electronics, such as those employing GaN and SiC, are expected to handle more power with higher efficiency than Si-based ones. GaN exhibits higher saturation velocity than Si. However, the thermal conductivity of GaN is low for power conversion systems. Moreover, it is currently difficult to obtain a thick and high quality GaN layer. SiC has its own native substrate, but it has inferior performance matrices (e.g., Johnson's figure of merit) versus GaN. In comparison, diamond exhibits most of the critical material properties for power electronics, except for its small substrate size at present. Diamond has a wide bandgap, high critical electric field, high carrier mobility, high carrier saturation velocities and the highest thermal conductivity among all available semiconductor materials [1][2][3] . Due to its superior electrical properties, the thickness of the highest quality diamond required to block an equivalent amount of voltage is approximately onefifth to one-fourth the thicknesses of GaN or SiC. In particular, the superior thermal conductivity of diamond could greatly simplify the design of heat dissipation and hence simplify entire power electronics modules. Therefore, diamond is considered the best material candidate for power electronics in terms of power switching efficiency, reliability, and system volume and weight.However, besides the lack of large ar...

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Section: Resultsmentioning

confidence: 99%

“…Because of the doping difficulty, the majority of diamond-based diodes reported to date are Schottky diodes [5][6][7][8] .…”

Section: Abstract: With the Best Overall Electronic And Thermal Propementioning

confidence: 99%

mentioning

confidence: 99%

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Thermal diffusion boron doping of single-crystal natural diamond

Seo

Mikael

et al. 2016

Journal of Applied Physics

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“…In various applications, elemental nitrogen and phosphorus are the candidate dopants for different materials, including carbon nanotubes [ 5 ], graphene [ 6 ], transition metal dichalcogenides [ 7 , 8 ], and carbon quantum dots [ 9 ]. However, in a single-crystalline diamond, the strongly bonded carbon atoms (with σ -bonds) cause a challenge of formation of the n -type diamond by nitrogen or phosphorus doping at room temperature due to their high activation energies [ 10 , 11 ]. On the other hand, diamond-like carbon (DLC) film is considered a high potential candidate for various technological applications in electronics and photonics [ 12 ].…”

Section: Introductionmentioning

confidence: 99%

Correlated Electrical Conductivities to Chemical Configurations of Nitrogenated Nanocrystalline Diamond Films

et al. 2022

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Diamond is one of the fascinating films appropriate for optoelectronic applications due to its wide bandgap (5.45 eV), high thermal conductivity (3320 W m−1·K−1), and strong chemical stability. In this report, we synthesized a type of diamond film called nanocrystalline diamond (NCD) by employing a physical vapor deposition method. The synthesis process was performed in different ratios of nitrogen and hydrogen mixed gas atmospheres to form nitrogen-doped (n-type) NCD films. A high-resolution scanning electron microscope confirmed the nature of the deposited films to contain diamond nanograins embedded into the amorphous carbon matrix. Sensitive spectroscopic investigations, including X-ray photoemission (XPS) and near-edge X-ray absorption fine structure (NEXAFS), were performed using a synchrotron beam. XPS spectra indicated that the nitrogen content in the film increased with the inflow ratio of nitrogen and hydrogen gas (IN/H). NEXAFS spectra revealed that the σ*C–C peak weakened, accompanied by a π*C=N peak strengthened with nitrogen doping. This structural modification after nitrogen doping was found to generate unpaired electrons with the formation of C–N and C=N bonding in grain boundaries (GBs). The measured electrical conductivity increased with nitrogen content, which confirms the suggestion of structural investigations that nitrogen-doping generated free electrons at the GBs of the NCD films.

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“…To take up the wide temperature ranges and the high current densities, a new high temperature packaging generation is currently investigated. In power electronic applications, diamond based semi-conductors appear to be the solution in order to widely increase the capabilities of the power electronic converters [1]. Diamond is known to have exceptional thermal, electrical and mechanical properties.…”

Section: Introductionmentioning

confidence: 99%

Experimental characterization of the mechanical behavior of two solder alloys for high temperature power electronics applications

Msolli

Alexis

Dalverny

et al. 2015

Microelectronics Reliability

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An experimental investigation of two potential candidate materials for the diamond die attachment is presented in this framework. These efforts are motivated by the need of developing a power electronic packaging for the diamond chip. The performance of the designed packaging relies particularly on the specific choice of the solder alloys for the die/substrate junction. To implement a high temperature junction, AuGe and AlSi eutectic alloys were chosen as die attachment and characterized experimentally. The choice of the AlSi alloy is motivated by its high melting temperature T m (577°C), its practical elaboration process and the restrictions of hazardous substances (RoHS) inter alia. The AuGe eutectic solder alloy has a melting temperature (356°C) and it is investigated here for comparison purposes with AlSi. The paper presents experimental results such as SEM observations of failure facies which are obtained from mechanical shear as well as cyclic nano-indentation results for the mechanical hardening/softening evaluation under cyclic loading paths.

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On-state behaviour of diamond Schottky diodes

Cited by 14 publications

References 14 publications

Thermal diffusion boron doping of single-crystal natural diamond

Thermal diffusion boron doping of single-crystal natural diamond

Correlated Electrical Conductivities to Chemical Configurations of Nitrogenated Nanocrystalline Diamond Films

Experimental characterization of the mechanical behavior of two solder alloys for high temperature power electronics applications

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