Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

Rashid, S.J.; Tajani, A.; Twitchen, Daniel J.; Coulbeck, L.; Udrea, F.; Butler, T.; Rupesinghe, N. L.; Brezeanu, M.; Isberg, Jan; Garraway, A.; Dixon, M.; Balmer, R.S.; Chamund, D.; Taylor, Paul D.; Amaratunga, G.A.J.

doi:10.1109/ted.2008.2003225

Cited by 51 publications

(37 citation statements)

References 27 publications

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“…Breakdown voltage of the fabricated device was 1.6KV [11]. Currently, the improved growth technique associated with surface oxidation technique resulted in better material characteristics, such as high breakdown field up to 3.1MV/cm [9] that has exceeded former reported value of 2.2MV/cm [12]. However, the device size is still limited to small size such as 100µm diameter, due to the defects.…”

Section: Sbd Devicementioning

confidence: 99%

Recent Progress of Diamond Device toward Power Application

Shikata

Ikeda

Kumaresan

et al. 2009

MSF

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Abstract. Diamond is nominated as a material candidate for future high power device due to its superior material properties and resulting very high FOM. In this paper, our recent progresses and the expected possibilities of diamond for power electronics applications are introduced as short review. Firstly for the epitaxial growth, by adopting step-flow epitaxial growth by off-angle substrate with optimized growth conditions, we have succeeded in reducing these killer defects almost six orders from 106cm-2 to almost 100cm-2 levels. For the substrate, our recently developed technology to fabricate diamond plates from bulk, 12x13mm2 size are available to use, that can avoid fabrication difficulties with small size substrate. Secondly for the device, primitive studies showed possibly for the advantage of diamond such as low reverse leakage current, high temperature and high current density operation.

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Section: Sbd Devicementioning

confidence: 99%

Recent Progress of Diamond Device toward Power Application

Shikata

Ikeda

Kumaresan

et al. 2009

MSF

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“…3D numerical simulations have been performed in the view of quantitatively investigating this phenomenon. Atlas3D from Silvaco has been used for 3D Finite Element analyses, where the diamond material properties have been set accordingly to [16], [17]. A smaller surface of 500 µm x 500 µm has been simulated ( Figure 6) mainly to limit the computing requirements while describing the same interactions between two monolithically integrated diamond Schottky diodes.…”

Section: Resultsmentioning

confidence: 99%

Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameter

Perez

Chicot

Avenas

et al. 2017

Diamond and Related Materials

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, et al.. Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameter. Diamond and Related Materials, Elsevier, 2017, 78, pp.83-87. 10.1016/j.diamond.2017 Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameter. However, self-heating during characterization process has been widely observed and fast and high temperature monitoring is highly desired, moreover temperature management is of high interest for device parallelization. In this article, we investigate the possibility to monolithically integrate a small area Schottky diode which will be used as temperature sensor. The diode voltage drop at a constant forward bias current will be used as a thermosensitive parameter. This voltage drop has a quasilinear variation over a temperature range (experimentally demonstrated from 300 K to 440 K in this study due to the maximum operating temperature of the experiments) at constant bias current densities between 0.25 A/cm² and 2.5 A/cm², with a sensor sensitivity of -1.6 mV/K. It is also demonstrated that this integrated temperature sensor is affected by the biasing conditions of the main Schottky diode. To perform reliable measurements, the temperature measurement must be done while the main Schottky diode is in OFF-state or the fabrication process must be modified. This integrated temperature measurement allows accurate junction temperature monitoring, offering a diamond Schottky diode operation at its best ON-state performance through an active device temperature management.

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“…Acceptor-like interface state charges located at interfacial layer-diamond interface are implemented as acceptor traps [16] The MIS model implemented in this simulation exhibits improvement over the simplified intimate contact SBD model reported in the literature [11][12][13][14][15]. The simplified SBD model does not simulate Fermi level pinning at Schottky metal-diamond interface.…”

Section:   ( ( ) )mentioning

confidence: 99%

“…Up to this date, reported works on modelling and simulation of diamond SBD [11][12][13][14][15] are based on ideal intimate contact diode structure. This simplified model is only able to simulate a diode's forward current voltage ( I V  ) curve with limited success, i.e.…”

Section: Introductionmentioning

confidence: 99%

Modeling and simulation of non-ideal characteristics of vertical Mo/diamond Schottky barrier diode based on MIS model

Nawawi

Tseng

Rusli

et al. 2014

Trans. Mat. Res. Soc. Japan

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Modeling and simulation of non-ideal characteristics of a vertical Mo/diamond Schottky barrier diode ( n = 7.677 and Schottky barrier height= 0.8554 at 298 K) were performed in finite element software. Diode's measured forward and reverse bias I V  characteristics at different temperature were presented and analyzed based on Metal-Interfacial layer-Semiconductor (MIS) model with interface states charges to explain the high ideality factor and Fermi level pinning at the Schottky metal-diamond interface. Current transport through the interfacial layer was simulated with Non-local tunneling model with Wentzel-Kramers-Brillouin (WKB) approximation. By combining characterization results and numerous simulations, we determined the values of unknown parameters (related to interfacial layer and energy distribution profile of the interface states charges) to best fit the forward and reverse bias I V T   characteristics simultaneously. Good fittings to the experimental data validate the use of MIS model. The best fitting was obtained with acceptor traps concentration of 1.3x10 13 to 2.7x10 13 eV -1 cm -2 . From reverse bias simulations, it was found that high electric field occurs inside the interfacial layer, especially at the corner of Schottky contact (~11.8 MV/cm). To avoid premature breakdown and realize true potential of diamond material, special attention on the metal-diamond interface must be paid.

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Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

Cited by 51 publications

References 27 publications

Recent Progress of Diamond Device toward Power Application

Recent Progress of Diamond Device toward Power Application

Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameter

Modeling and simulation of non-ideal characteristics of vertical Mo/diamond Schottky barrier diode based on MIS model

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