Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameter

Perez, Gaëtan; Chicot, Gauthier; Avenas, Yvan; Lefranc, Pierre; Jeannin, Pierre-Olivier; Eon, David; Rouger, Nicolas

doi:10.1016/j.diamond.2017.08.008

Cited by 28 publications

(16 citation statements)

References 18 publications

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“…However, the total current is limited with this design due to the lateral current flow in the p+ layer. Interactions between diodes are also observed using this design [17]. Nevertheless, good properties are obtained such as high current density and high breakdown voltage [5].…”

Section: Brief Review Of Diamond Diodesmentioning

confidence: 83%

Design of Diamond Power Devices: Application to Schottky Barrier Diodes

Rouger

Maréchal

2019

Energies

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Owing to its outstanding electro-thermal properties, such as the highest thermal conductivity (22 W/(cm∙K) at room temperature), high hole mobility (2000 cm2/(V∙s)), high critical electric field (10 MV/cm) and large band gap (5.5 eV), diamond represents the ultimate semiconductor for high power and high temperature power applications. Diamond Schottky barrier diodes are good candidates for short-term implementation in power converters due to their relative maturity. Nonetheless, diamond as a semiconductor for power devices leads to specificities such as incomplete dopant ionization at room temperature and above, and the limited availability of implantation techniques. This article presents such specificities and their impacts on the optimal design of diamond Schottky barrier diodes. First, the tradeoff between ON-state and OFF-state is discussed based on 1D analytical models. Then, 2D numerical studies show the optimal design of floating metal rings to improve the effective breakdown voltage. Both analyses show that the doping of the drift region must be reduced to reduce leakage currents and to increase edge termination efficiency, leading to better figures of merit. The obtained improvements in breakdown voltage are compared with fabrication challenges and the impacts on forward voltage drop.

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Section: Brief Review Of Diamond Diodesmentioning

confidence: 83%

Design of Diamond Power Devices: Application to Schottky Barrier Diodes

Rouger

Maréchal

2019

Energies

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“…Accepted version (Elsevier, DRM2020): https://doi.org/10.1016/j.diamond.2020.108154 resistance. Such a closed loop forced convection control can be possible by using a junction temperature estimation of the device in operation in the power converter [43]. This solution can be analyzed with a particular care on the dynamic response of the temperature control loop to avoid the diamond device thermal runaway.…”

Section: Discussionmentioning

confidence: 99%

Diamond semiconductor performances in power electronics applications

Perez

Maréchal

Chicot³

et al. 2020

Diamond and Related Materials

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This paper proposes a system-level comparison between diamond and SiC power devices. It highlights the benefits of diamond semiconductors for power electronics applications. Actual diamond power devices are fabricated and characterized (DC, AC small-signal and largesignal power switching in a buck converter). Thanks to the experimental data, the models of diamond devices are discussed and the expected performances of future diamond semiconductors in power converters are presented. These performances are compared to the commercialized SiC Schottky diodes for a given application. Our analysis shows that diamond devices can be used to increase power converters' performances especially at high temperature. It is demonstrated that for a 450K junction temperature diamond semiconductors can divide by three the semiconductor losses and heatsink volume in comparison to SiC devices. We also demonstrate that the switching frequency with diamond devices can be five times higher than with SiC devices, with lower total semiconductor losses and smaller heatsink in diamond based power converters. This system level analysis clearly shows the future improvements of power converters' efficiency and their power densities thanks to diamond power devices. The need of a

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“…SDs use epitaxial silicon [19,25,[27][28][29] and polysilicon structures [11] of n -or p-type conductivity with array of different metal, silicon carbide 4H-SiC with barrier metal of Ni [16,20], Ti [30,31], Pt [32] and V2O5 [18], as well as working layers of GaN [17,33] or graphene [34,35] and many other combinations. Semiconductor structures and sapphire [17] or diamond [19] insulators were chosen as substrate for developments. Additionally, SDs were created on SOI wafers [12,13,34,36].…”

Section: Introductionmentioning

confidence: 99%

Schottky diode temperature sensor for pressure sensor

Basov¹

2021

Preprint

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The small silicon chip of Schottky diode (0.8x0.8x0.4 mm3) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward I-V characteristic of chip PSD is determined by potential barrier between Mo and n-Si (ND = 3 × 1015 cm-3). Forward voltage UF = 208 ± 6 mV and temperature coefficient TC = -1.635 ± 0.015 mV/⁰C (with linearity kT <0.4% for temperature range of -65 to +85 ⁰C) at supply current IF = 1 mA is achieved. The reverse I-V characteristic has high breakdown voltage UBR > 85 V and low leakage current IL < 5 μA at 25 ⁰C and IL < 130 μA at 85 ⁰C (UR = 20 V) because chip PSD contains the structure of two p-type guard rings along the anode perimeter. The application of PSD chip for wider temperature range from -65 to +115 ⁰C is proved. The separate chip PSD of temperature sensor located at a distance of less than 1.5 mm from the pressure sensor chip. The PSD chip transmits input data for temperature compensation of pressure sensor errors by ASIC and for direct temperature measurement.

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Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameter

Cited by 28 publications

References 18 publications

Design of Diamond Power Devices: Application to Schottky Barrier Diodes

Design of Diamond Power Devices: Application to Schottky Barrier Diodes

Diamond semiconductor performances in power electronics applications

Schottky diode temperature sensor for pressure sensor

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