Development of high efficiency p–i–n amorphous silicon solar cells with the p-μc-Si:H/p-a-SiC:H double window layer

Chang, Ping; Hsieh, Po Tsung; Lu, Chun-Shien; Yeh, Chih Hung; Houng, Mau Phon

doi:10.1016/j.solmat.2011.05.036

Cited by 19 publications

(8 citation statements)

References 9 publications

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“…Some examples of interlayers include n-type lc-Si:H, 3,4 amorphous hydrogenated germanium, 5,6 n-type amorphous tungsten oxide, 7 and metallic nanodots of high work function materials, such as gold, platinum, palladium, or silver. 8 A simpler but still effective approach is addition of a p-type lc-Si:H interlayer between ZnO and a-Si:H. 9,10 The importance of assessing the ZnO/p-type Si Schottky barrier at the interface is essential for the optimization of the solar cell.…”

Section: Transport Mechanisms and Effective Schottky Barrier Height Omentioning

confidence: 99%

Transport mechanisms and effective Schottky barrier height of ZnO/a-Si:H and ZnO/μc-Si:H heterojunction solar cells

Corpus-Mendoza¹,

Souza²,

Hamelmann³

2013

Journal of Applied Physics

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The impact of boron doping on the p-layer of thin film silicon solar cells is assessed by measuring the effective Schottky barrier height of ZnO/a-Si:H and ZnO/μc-Si:H heterojunctions. A deviation from ideal diode characteristics is revealed by an increase of ideality factor with doping concentration. Higher current densities and lower effective Schottky barriers are evaluated for higher doping levels, resulting in increasingly Ohmic behaviour. This is attributed to an enhancement of tunneling through a thinner depletion region, as supported by computer simulations. Extracted barriers are in the range of 0.7–1 eV for the heterojunctions with rectifying behaviour.

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Section: Transport Mechanisms and Effective Schottky Barrier Height Omentioning

confidence: 99%

Transport mechanisms and effective Schottky barrier height of ZnO/a-Si:H and ZnO/μc-Si:H heterojunction solar cells

Corpus-Mendoza¹,

Souza²,

Hamelmann³

2013

Journal of Applied Physics

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“…They are very promising coatings for a wide range of technological applications. According to recent reports they may be used, for example, as scratch‐ and corrosion‐resistant protective coatings, optical waveguides for telecommunications, window or emitter p‐layers in solar cells, and microwave‐absorbing coatings for microwave heating systems …”

Section: Introductionmentioning

confidence: 99%

a‐SiC:H Films by Remote Hydrogen Microwave Plasma CVD From Ethylsilane Precursors^**

Wróbel

Walkiewicz-Pietrzykowska

Uznański

et al. 2013

Chemical Vapor Deposition

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Amorphous, hydrogenated, silicon carbide (a-SiC:H) films are deposited in the remote hydrogen microwave plasma (RP-CVD) process using diethylsilane as a single-source precursor. The effect of substrate temperature (T S ) on the kinetics of RP-CVD, chemical composition, structure, surface morphology, and properties (density, refractive index, and extinction coefficient) of the resulting a-SiC:H films is investigated. The T S dependence of film growth rate implies that RP-CVD is an adsorption-controlled process. The increase of T S from 30°C to 350°C causes the elimination of organic moieties from the film and the formation of a SiÀC network structure. The relationships between the content of SiÀC bonds, represented by the relative integrated intensity of the SiÀC IR band, and the film properties are determined. The number of SiÀC bonds is found to be a key parameter in the control of the examined film properties. The films deposited at T S ¼ 350°C appear to be very dense materials exhibiting small surface roughness and high refractive index. The results of the present study are compared with those reported for a-SiC:H films produced by RP-CVD from a triethylsilane precursor.

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“…17 In this technique, the properties of the grown lm can be controlled by the various process parameters such as arc current, substrate temperature, substrate bias, and gaseous pressure used in the reactive mode. For the growth of a-SiC:H thin lm using these conventional processes, a mixture of SiH 4 and CH 4 gases and for the doping purpose B 2 H 6 and PH 3 gases are used. Moreover, the SiH 4 gas employed in the growth of the lm is ammable and the doping gases like B 2 H 6 and PH 3 are highly toxic in nature.…”

Section: Introductionmentioning

confidence: 99%

“…Hydrogenated amorphous silicon carbide (a-SiC:H), considered as one of the most promising thin-lm materials exhibits unique physical, chemical, electronic and optical properties 1 and has a variety of promising technological applications 2 in thin lm photovoltaic devices, 3 thin lm transistors, image sensors, etc. The applications may range from the protective layer of solar cells for both the crystalline and thin lms 4 to microelectronic nanomechanical devices 5 and from the passivation layer to lithium ion batteries. 6 Silicon carbide is also used as a substrate in the catalyst free growth of graphene by many researchers.…”

Section: Introductionmentioning

confidence: 99%

Investigations on phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique for photo detecting applications

et al. 2014

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This paper reports the growth and properties of phosphorous doped hydrogenated amorphous silicon carbide (P doped a-SiC:H) thin films deposited at room temperature by a filtered cathodic vacuum arc (FCVA) technique using a phosphorous doped solid silicon target as a cathode in the presence of acetylene gas. These films have been characterized by X-ray diffraction (XRD), scanning electron microscopy, energy dispersive X-ray analysis, dark conductivity, activation energy, optical band gap, secondary ion mass spectroscopy, Raman spectroscopy, current-voltage, capacitance-voltage and photoconductive measurements. XRD results exhibit predominantly an amorphous phase for the films.The effect of the arc current on the properties of P doped a-SiC:H films have been studied. A P doped a-SiC:H/c-Si heterojunction diode was fabricated which showed a diode ideality factor between 1.5 to 1.7 and the density of states were 9.6 Â 10 16 to 4.8 Â 10 17 cm À3 eV À1. The photo response behaviors of the P doped a-SiC:H films have been tested by measuring the change in the electrical resistance on light illumination with the fast response and recovery time as 7.8 to 9.5 and 6.2 to 12.8 s, respectively. The P doped a-SiC:H film deposited at a 30 A arc current has shown a photo response of $1.6% at an illumination intensity of $100 mW cm À2.

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Development of high efficiency p–i–n amorphous silicon solar cells with the p-μc-Si:H/p-a-SiC:H double window layer

Cited by 19 publications

References 9 publications

Transport mechanisms and effective Schottky barrier height of ZnO/a-Si:H and ZnO/μc-Si:H heterojunction solar cells

Transport mechanisms and effective Schottky barrier height of ZnO/a-Si:H and ZnO/μc-Si:H heterojunction solar cells

a‐SiC:H Films by Remote Hydrogen Microwave Plasma CVD From Ethylsilane Precursors^**

Investigations on phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique for photo detecting applications

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Development of high efficiency p–i–n amorphous silicon solar cells with the p-μc-Si:H/p-a-SiC:H double window layer

Cited by 19 publications

References 9 publications

Transport mechanisms and effective Schottky barrier height of ZnO/a-Si:H and ZnO/μc-Si:H heterojunction solar cells

Transport mechanisms and effective Schottky barrier height of ZnO/a-Si:H and ZnO/μc-Si:H heterojunction solar cells

a‐SiC:H Films by Remote Hydrogen Microwave Plasma CVD From Ethylsilane Precursors**

Investigations on phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique for photo detecting applications

Contact Info

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a‐SiC:H Films by Remote Hydrogen Microwave Plasma CVD From Ethylsilane Precursors^**