Determination of the semiconductor doping profile right up to its surface using the MIS capacitor

Ziegler, K.; Klausmann, E.; Kar, S.

doi:10.1016/0038-1101(75)90102-1

Cited by 71 publications

(13 citation statements)

References 18 publications

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“…The measured carrier concentration profiles of unimplanted Si determined by pulsed CV measurements of the MOS structure as described by Ziegler et al [7] and by the ECV method are very different for the depth region near the interface (Fig. 1).…”

Section: Unimplanted Samplesmentioning

confidence: 91%

Some Limitations of the Measurement of Dopant Distribution in Silicon Layers using Electrochemical Capacitance-Voltage Measurements

Sieber

Wulf²

1991

Phys. Stat. Sol. (a)

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The electrochemical capacitance‐voltage (C–V) measurement is widely used for the measurement of the carrier concentration in semiconductors with a relatively high doping level where the depletion layer width is very small. In some cases this method can also be used for the investigation of the carrier concentration distribution in semiconductors with a low doping level. This paper deals with the problems due to the limitations of the measurement devices, of the imperfections of the investigated materials as well as of the measuring principle connected with the depletion approximation used for the determination of doping profile in samples with low doped silicon. These limitations are investigated using implanted and homogeneously doped samples. The measuring profiles are compared with the calculated distribution as well as with the spreading resistance and pulsed C‐V measurements of the MOS structure. Some advantages and disadvantages of this technique are shown.

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Section: Unimplanted Samplesmentioning

confidence: 91%

Some Limitations of the Measurement of Dopant Distribution in Silicon Layers using Electrochemical Capacitance-Voltage Measurements

Sieber

Wulf²

1991

Phys. Stat. Sol. (a)

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“…[2]- [5] can be manipulated to obtain the dopant profile equations Wm --(esXo/eo) (dVsB/dVGs) [6] and Nra(Wm) "--(eo2/qesXo2)/(d2VsB/dVGs 2) [7] where the subscript m refers to quantities derived from the measured voltages, Vss and VGS. Although these equations were derived for a uniform dopant density, it has also been shown that they are valid for an arbitrary dopant density (1).…”

Section: Dopant Profile Equationsmentioning

confidence: 99%

“…[6] and [7] by numerically differentiating the VSB --VGs table established by the above procedure. The results are shown in Fig.…”

Section: Depletion Approximation Limitmentioning

confidence: 99%

The D‐C MOSFET Dopant Profile Method

Buehler

1980

J. Electrochem. Soc.

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Dopant profiles can be determined from d-c measurements on a fourterminal surface-channel MOSFET. The region from about three Debye lengths from the oxide-silicon interface to a maximum depth, limited by the avalanche breakdown in silicon, can be profiled by this method. Within three Debye lengths of the surface, the depletion approximation fails, and in this region the profile has a characteristic dip which is easily recognized. Other limitations include effects due to the field dependence of the channel mobility, short channel enects, and the lack of parallelism of the depletion edge with the interface. The method is illustrated by dopant profiles of bulk wafers, implanted layers, and a diffused layer. The dopant densities covered by these profiles vary from 6 X 1014 cm -~ to 2 • 1018 cm -~. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 165.123.34.86 Downloaded on 2015-06-20 to IP

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“…( equal to the thickness of the transition region of the depletion layer edge ) [1] as shown in Fig.I.…”

mentioning

confidence: 99%

“…While analytical methods that derive doping profile from C-V curves have been proposed by several authors [1], [2] to resolve the problem, we present a more general method, a C-V fit method, that uses a numerical capacitance simulator.…”

mentioning

confidence: 99%

Determination of doping profile in sub-Debye-length region

Toyabe

Matsuo

Yamamoto

et al.

International Technical Digest on Electron Devices Meeting

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A C-V fit method is proposed to determine the doping profile in shallow regions, of depth less than the extrinsic Debye length. The method has been incorporated in a process-device simulation system, and applied for verification of the simulation of a 0.8 J.Lm gate MOSFET. lNlRODUCTIONThe doping profile in semiconductor devices is one of the most important factors which determine device characteristics.The channel doping in submicron devices is often formed in a shallow region, of depth less than the relevant extrinsic Debye length.The extrinsic Debye length A. ( = (2kTEs/q2N )

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Determination of the semiconductor doping profile right up to its surface using the MIS capacitor

Cited by 71 publications

References 18 publications

Some Limitations of the Measurement of Dopant Distribution in Silicon Layers using Electrochemical Capacitance-Voltage Measurements

Some Limitations of the Measurement of Dopant Distribution in Silicon Layers using Electrochemical Capacitance-Voltage Measurements

The D‐C MOSFET Dopant Profile Method

Determination of doping profile in sub-Debye-length region

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