Determination of doping profile in sub-Debye-length region

Abstract

A C-V fit method is proposed to determine the doping profile in shallow regions, of depth less than the extrinsic Debye length. The method has been incorporated in a process-device simulation system, and applied for verification of the simulation of a 0.8 J.Lm gate MOSFET. lNlRODUCTIONThe doping profile in semiconductor devices is one of the most important factors which determine device characteristics.The channel doping in submicron devices is often formed in a shallow region, of depth less than the relevant extrinsic Debye length.The extrinsic Debye length A. ( = (2kTEs/q2N )