Determination of the Retarded Diffusion of Antimony by SIMS Measurements and Numerical Simulations

Abstract

The oxidation retarded diffusion (ORD) of antimony during dry oxidation is investigated at temperatures of 1000° and 1100°C. For the experiments float zone <100> silicon wafers with a pattern of silicon nitride and a free surface are used to obtain domains with normal intrinsic and retarded diffusion on the same wafers. Additionally, numerical simulations are performed to determine quantitatively the magnitude of ORD. The results are summarized and compared to published values. It seems remarkable that the recombination of self‐interstitials and vacancies at 1000°C is sufficiently fast to cause a significant retardation of the diffusion of antimony after only 500 min oxidation time.

Role of Point Defects and Defect Complexes in Silicon Device Processing: Summary Report and Papers of the Second Workshop, 24-26 August 1992, Breckenridge, Colorado

“…The P concentration at the CoSi:2/Si interface in the 900°C, 60 sec C0Si2 sample was investigated by performing SIMS analysis without removing the silicide film. Quantification of phosphorus concentration in the silicide was achieved in a manner described in [23], using separate phosphorus implanted Si and C0Si2 standards for determining sputter rates and relative sensitivity factors. The resulting SIMS R_hos~horus profile of the 60 sec CoSii sample revealed an interfacial phosphorus peak of about 10 0/cm .…”

“…Measurements of enhanced and retarded diffusion during oxidation have resulted in contradictory conclusions. Antoniadis and Moskowitz [22] found apparently slow recombination suggesting a large barrier, while more recent measurements by Guerrero et al [23] suggest that there is at most a small barrier to recombination. We have shown in previous work [24], and it has also been observed by Richardson and Mulvaney [25] for a similar system, that relatively rapid I/V recombination (small or neglible barrier) is required in order for simulations to approximate experimental profiles.…”

“…Table 3 is a summary of positron lifetime results obtained on as-received wafers taken from the seed-, middle-, and tail-sections of two boules grown at different pull speeds [23]. If one now makes the assumption, as is usually done, that the short-lived 1:1 component is actually the bulk lifetime modified by trapping into defects which give rise to the longer-lived 1:2 component, one can use the simple trapping model [21] to calculate what the bulk lifetime should have been.…”

Understanding implant damage by implant channeling profile measurements

“…During annealing, these point defects, namely vacancies and interstitials, will diffuse and recombine both with other defects (IV recombination) and at interfaces. It has been reported by some authors that IV recombination has a substantial recombination barrier [2] while other authors have reported a smaller barrier [3]. In this study, a 200 keV, le14 Si implant was used to generate an initial damage profile.…”