Determination of Etch Rate Behavior of 4H–SiC Using Chlorine Trifluoride Gas

Miura, Yutaka; Habuka, Hitoshi; Katsumi, Yusuke; Oda, Satoko; Fukai, Y.; Fukae, Katsuya; Kato, Tomohisa; Okumura, Hajime; Arai, Kazuo

doi:10.1143/jjap.46.7875

Cited by 28 publications

(31 citation statements)

References 11 publications

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“…The silicon carbide etching could continue even after the carbon film was formed. 3,6 Thus, the carbon film obtained in this study was not dense; the chlorine trifluoride gas could be transported through the carbon film to the silicon carbide surface to continuously cause the etching.…”

Section: P442mentioning

confidence: 86%

Formation and Removal of Carbon Film on Silicon Carbide Surface Using Chlorine Trifluoride Gas

Hirooka

Habuka

Takahashi

et al. 2016

ECS J. Solid State Sci. Technol.

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A carbon film was formed and reduced by etching of the silicon carbide surface using chlorine trifluoride gas. The high rate silicon carbide etching at high temperatures, typically 600-750 • C, simultaneously produced the by-product of a carbon film on the silicon carbide surface. It was often thicker than several hundred nanometers. The formed carbon film could be removed by the same etchant, chlorine trifluoride gas, at temperatures lower than 400 • C. For the practical use of the high rate etching, a combination of a high and low temperature etching is useful.

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Section: P442mentioning

confidence: 86%

Formation and Removal of Carbon Film on Silicon Carbide Surface Using Chlorine Trifluoride Gas

Hirooka

Habuka

Takahashi

et al. 2016

ECS J. Solid State Sci. Technol.

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“…For this purpose, the authors have developed a chemical etching method of SiC using chlorine trifluoride gas (2)(3)(4)(5)(6)(7). Our previous Study (7) showed that the etch pits formed at low temperatures might have a relationship with dislocations.…”

Section: Introductionmentioning

confidence: 99%

Etch Pits of 4H-Silicon Carbide Surface Formed Using Chlorine Trifluoride Gas

Habuka¹,

Furukawa²,

Tanaka³

et al. 2010

ECS Trans.

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Surface morphology of a single-crystalline 4H-silicon carbide (SiC) etched by chlorine trifluoride gas was studied over the wide temperature range of 570-1570 K at atmospheric pressure in a horizontal cold wall reactor. The etch rate of both the Si-face and C-face 4H-SiC at the substrate temperatures between 720 and 1570 K was simultaneously measured to be nearly flat at ca. 5 μm min -1 . The Si-face and C-face showed pitted surfaces at low temperatures; the pits tended to become small and shallow with the increasing substrate temperature. This temperature-dependent behavior is expressed using the rate theory accounting for the slightly low activation energy at the spot causing the pit. The etch pits formed at low temperature may have relationship with crystalline defects, such as threading edge dislocation and screw dislocation.

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“…[5][6][7][8][9] The material of the horizontal cold-wall reactor used in these studies was fused silica. When the highly reactive gases are supplied into the chamber, the inner side wall of the fused silica chamber is exposed and etched by the gases.…”

Section: Introductionmentioning

confidence: 99%

Etching Rate of Silicon Dioxide Using Chlorine Trifluoride Gas

Miura¹,

Kasahara²,

Habuka³

et al. 2009

jjap

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The etching rate behavior of silicon dioxide (SiO 2 , fused silica) using chlorine trifluoride (ClF 3 ) gas is studied at substrate temperatures between 573 and 1273 K at atmospheric pressure in a horizontal cold-wall reactor. The etching rate increases with the ClF 3 gas concentration, and the overall reaction is recognized to be of the first order. The change of the etching rate with increasing substrate temperature is nonlinear, and the etching rate tends to approach a constant value at temperatures exceeding 1173 K. The overall rate constant is estimated by numerical calculation, taking into account the transport phenomena in the reactor, including the chemical reaction at the substrate surface. The activation energy obtained in this study is 45.8 kJ mol À1 , and the rate constant is consistent with the measured etching rate behavior. A reactor system in which there is minimum etching of the fused silica chamber by ClF 3 gas can be achieved using an IR lamp heating unit and a chamber cooling unit to maintain a sufficiently low temperature of the chamber wall.

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Determination of Etch Rate Behavior of 4H–SiC Using Chlorine Trifluoride Gas

Cited by 28 publications

References 11 publications

Formation and Removal of Carbon Film on Silicon Carbide Surface Using Chlorine Trifluoride Gas

Formation and Removal of Carbon Film on Silicon Carbide Surface Using Chlorine Trifluoride Gas

Etch Pits of 4H-Silicon Carbide Surface Formed Using Chlorine Trifluoride Gas

Etching Rate of Silicon Dioxide Using Chlorine Trifluoride Gas

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