The etch pits on the C-face 4H-SiC substrate was produced by chlorine trifluoride gas at various temperatures. The etch pit density showed the comparable value to the current dislocation density level of the Si-face 4H-SiC, when the etching was performed around 713 K. Thus, the etch pit density obtained by this technique is expected to reveal the crystal quality.
The etch pit density produced on the C-face 4H-SiC substrate using chlorine trifluoride gas at various temperatures was evaluated. Because the etch pit density formed at the substrate temperature of 713 K showed the comparable value to the current dislocation level of the Si-face 4H-SiC, the etch pit density obtained by this technique is considered to have a relationship with the crystal quality.
Selective etching on the surface of single-crystalline 4H-SiC was performed using ClF3 gas at 700 K and at atmospheric pressure in a cold wall reactor. The etch pits at the Si-face and C-face 4H-SiC surface may have relationship with the threading edge and screw dislocation.
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