Formation and Removal of Carbon Film on Silicon Carbide Surface Using Chlorine Trifluoride Gas

Hirooka, Asumi; Habuka, Hitoshi; Takahashi, Yoshinao; Kato, Tomohisa

doi:10.1149/2.0301607jss

Cited by 4 publications

(10 citation statements)

References 13 publications

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“…Moreover, the synthesis of carbide-derived carbons (CDCs) has been explored with the reaction of carbides MC x (M = Si, Al, Ti, Zr, V, Nb, Ta, etc.) with Cl 2 –Ar under dynamic flow and ambient pressure at ∼900 to 1000 °C to form graphitic C and MCl x . , The other halogens react similarly with MC x and are all potentially suitable agents for etching Ni at high temperatures without damaging the graphite film. , Because anhydrous Cl 2 gas has a higher reactivity than Br 2 and I 2 , and because they are respectively a liquid and a solid that would require additional optimization of appropriate bubbler-type set-ups, we selected Cl 2 for the etching process. Fluorine was not selected because of its severe safety hazards.…”

Section: Resultsmentioning

confidence: 99%

“…45,46 The other halogens react similarly with MC x and are all potentially suitable agents for etching Ni at high temperatures without damaging the graphite film. 46,47 Because anhydrous Cl 2 gas has a higher reactivity than Br 2 and I 2 , and because they are respectively a liquid and a solid that would require additional optimization of appropriate bubbler-type set-ups, we selected Cl 2 for the etching process. Fluorine was not selected because of its severe safety hazards.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Synthesis of Highly Oriented Graphite Films with a Low Wrinkle Density and Near-Millimeter-Scale Lateral Grains

et al. 2020

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Principal defects found in graphite films include grain boundaries and wrinkles. These defects are well known to have detrimental effects on properties such as thermal and electrical conductivities as well as mechanical properties. With a two-fold objective of synthesizing graphite films with large single crystal grains and no wrinkles, we have developed a relatively low temperature (< 1150 °C) process that involves the precipitation of graphite films from nickel-carbon solid solutions followed by in-situ etching of the nickel foil substrates with anhydrous chlorine gas to obtain near wrinkle free continuous graphite films. The size (La) distribution of lateral grains (or single crystal regions) in these highly oriented graphite films has been found to be asymmetric with the largest grains about 0.9 mm in diameter, as determined by electron backscatter diffraction (EBSD). Thus, the growth of large area graphite films with grains much larger than those reported for highly oriented pyrolytic graphite (HOPG, ~20-30 µm), and with a low density of wrinkles, as in the case of HOPG, but prepared at much lower temperatures, is reported here.

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Section: Resultsmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

Synthesis of Highly Oriented Graphite Films with a Low Wrinkle Density and Near-Millimeter-Scale Lateral Grains

et al. 2020

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“…• C. At this temperature, the wafer surface was again exposed to the chlorine trifluoride gas at 100% for 5 minute in order to remove the carbon film 17 formed on the wafer surface during the etching at 500…”

Section: Methodsmentioning

confidence: 99%

“…• C. 17 After terminating the chlorine trifluoride gas, the wafer was cooled to room temperature in ambient nitrogen. The wafer was then removed from the reactor.…”

Section: Methodsmentioning

confidence: 99%

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Mirror Etching of Single Crystalline C-Face 4H-Silicon Carbide Wafer by Chlorine Trifluoride Gas

Okuyama¹,

Kurashima²,

Habuka³

et al. 2017

ECS J. Solid State Sci. Technol.

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In order to evaluate the potential of a non-plasma dry etcher for silicon carbide, a 50-mm-diameter C-face 4H-silicon carbide wafer was etched using chlorine trifluoride gas at 500 • C. The wafer deformation was sufficiently small after the repetitive etching, even though the wafer was very thin, that is, about 160-μm thick. When the wafer surface was significantly etched, concentric-circleshaped valleys were formed at the radii corresponding to the circular-shaped arrays of pinholes at the gas distributor. Because the local pattern of the 4H-silicon carbide wafer etching rate corresponded to that of the chlorine trifluoride gas supply, the etching rate distribution was determined to be mainly governed by the chlorine trifluoride gas flow. Because the surface morphology and roughness after the etching was comparable to that of the mirror-polished wafer surface, the etcher evaluated in this study was expected to have a significant potential for mirror etching. In order to reduce the electric energy loss, power electronics 1-3 is currently playing major roles and making enormous contributions over the world. The power devices have various key positions to govern and improve the overall power consumption efficiency. They will have more functions and capabilities achieved by advancing the technologies of material production and device designs.The power devices are made of semiconductor materials, 2,3 such as silicon (Si), silicon carbide (SiC) and gallium nitride (GaN). The silicon carbide power devices have been developed by many researchers and engineers due to their fascinating nature, such as a high dielectric breakdown voltage, for high voltage use. The silicon carbide power devices are actually installed and currently working in trains and vehicles.2,3 Because the power device demand will further increase in the future, the process of silicon carbide material production should be improved.The significantly hard and nonreactive properties of the silicon carbide very often make the device fabrication processes long and complex. When the wafer back side is thinned by mechanical or chemical mechanical polishing after the device fabrication, the thinning processes require several hours or more. The removal rate is still about 0.2 μm/min when the plasma and Pt catalyst are used for the polishing.4-10 For developing a high speed process, an alternative high speed process, such as chemical etching, is expected.For improving the removal rate by the chemical approach, chlorine trifluoride (ClF 3 ) gas 11-17 is expected to be useful. The chlorine trifluoride gas has been reported to quickly etch the Si-and C-faces single-crystalline 4H-silicon carbide (SiC) material at a high rate, such as 5 μm/min.11 The C-face 4H-silicon carbide could be etched while maintaining the mirror-polished surface. 11,17In order to realize an industrial-scale wafer etching process, the SiC single-wafer dry etcher has been designed, fabricated and evaluated. [13][14][15][16] In this reactor, the entire etching rate profile over the 50 mm-diamet...

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Anticorrosive Behavior of SiC_xN_yO_z Film Formed by Non-Heat Assistance Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane, Nitrogen and Argon Gases

Watanabe¹,

Hori²,

Habuka³

2020

ECS J. Solid State Sci. Technol.

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A SiC x N y O z film was formed on an aluminum substrate without any heating assistance using monomethylsilane, nitrogen and argon gases at 10–30 Pa by the parallel plate plasma-enhanced chemical vapor deposition method. The obtained film did not have any considerable pinhole and crack, based on the evaluation using a concentrated hydrogen chloride aqueous solution. The anti-corrosive behavior of the obtained film was studied by means of chlorine trifluoride gas etching at the concentration of 100% at atmospheric pressure and at various temperatures. The etching rate increased with the increasing temperature and with the increasing nitrogen concentration in the film. The increase in the nitrogen concentration in the film enhanced the fluorine diffusion through the film during the etching. The anticorrosive behavior was determined to be adjustable by the nitrogen concentration contained in the film.

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Formation and Removal of Carbon Film on Silicon Carbide Surface Using Chlorine Trifluoride Gas

Cited by 4 publications

References 13 publications

Synthesis of Highly Oriented Graphite Films with a Low Wrinkle Density and Near-Millimeter-Scale Lateral Grains

Synthesis of Highly Oriented Graphite Films with a Low Wrinkle Density and Near-Millimeter-Scale Lateral Grains

Mirror Etching of Single Crystalline C-Face 4H-Silicon Carbide Wafer by Chlorine Trifluoride Gas

Anticorrosive Behavior of SiC_xN_yO_z Film Formed by Non-Heat Assistance Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane, Nitrogen and Argon Gases

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Formation and Removal of Carbon Film on Silicon Carbide Surface Using Chlorine Trifluoride Gas

Cited by 4 publications

References 13 publications

Synthesis of Highly Oriented Graphite Films with a Low Wrinkle Density and Near-Millimeter-Scale Lateral Grains

Synthesis of Highly Oriented Graphite Films with a Low Wrinkle Density and Near-Millimeter-Scale Lateral Grains

Mirror Etching of Single Crystalline C-Face 4H-Silicon Carbide Wafer by Chlorine Trifluoride Gas

Anticorrosive Behavior of SiCxNyOz Film Formed by Non-Heat Assistance Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane, Nitrogen and Argon Gases

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Anticorrosive Behavior of SiC_xN_yO_z Film Formed by Non-Heat Assistance Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane, Nitrogen and Argon Gases