Anticorrosive Behavior of SiC_xN_yO_z Film Formed by Non-Heat Assistance Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane, Nitrogen and Argon Gases

Abstract

A SiC x N y O z film was formed on an aluminum substrate without any heating assistance using monomethylsilane, nitrogen and argon gases at 10–30 Pa by the parallel plate plasma-enhanced chemical vapor deposition method. The obtained film did not have any considerable pinhole and crack, based on the evaluation using a concentrated hydrogen chloride aqueous solution. The anti-corrosive behavior of the obtained film was studied by means of chlorine trifluoride gas etching at the concentration of 100% at atmospheric pressure and at various temperatures. The etching rate increased with the increasing temperature and with the increasing nitrogen concentration in the film. The increase in the nitrogen concentration in the film enhanced the fluorine diffusion through the film during the etching. The anticorrosive behavior was determined to be adjustable by the nitrogen concentration contained in the film.

Chemical Conditions of SiCNO Film Exposed to ClF3 Gas

“…This study used the parallel plate PECVD reactor having 80-mmdiameter upper and lower electrodes for the glow discharge (Soft Plasma Etcher-SE, Meiwafosis Co., Ltd., Tokyo, Japan. ), [10][11][12][13][14] as shown in Fig. 1.…”

“…In this study, the PECVD technique with no heating assistance was utilized for designing and preparing the SiCNO film. [10][11][12][13] The formed film was exposed to the 10% ClF 3 gas, which was strong but milder than that used in the previous study. 10 The surface chemical conditions and the contents in the film were analyzed in detail to study the process during the etching.…”

“…[1][2][3][4][5] Because a SiCNO material is expected to have properties consisting of the mixed advantages of SiC, SiN and SiO 2 , the SiCNO film was produced by a plasma-enhanced chemical vapor deposition (PECVD). [6][7][8][9][10] In a previous study 10 for evaluating the anticorrosive nature of the SiCNO film, a significantly strong etchant, such as ClF 3 gas at 100% and at atmospheric pressure, was used. The etching was shown to be significant at high temperatures.…”

Electric Current in Rate Equation for Parallel Plate Plasma-Enhanced Chemical Vapour Deposition of SiCxNyOz Film without Heat Assistance

“…The SEM and XPS data of the samples were reported in detail in the previous reports. 6,7 The center point of substrate was evaluated. Additionally, five substrates were simultaneously used for one film growth operation and were evaluated to confirm that there were not significant differences between the samples.…”