Electric Current in Rate Equation for Parallel Plate Plasma-Enhanced Chemical Vapour Deposition of SiC_xN_yO_z Film without Heat Assistance

Abstract

A 50–500 nm-thick SiC x N y Oz film was formed in parallel plate plasma at room temperature using a gas mixture of monomethylsilane, nitrogen and argon at 10−30 Pa for 5 min at the electric current of 1–16 mA. The film thickness and the concentrations of the silicon, carbon, nitrogen and oxygen were expressed by equations assuming that various chemical reactions in the gas phase and at the surface were enhanced by both the electric current and the partial pressure of the gases. The obtained equations showed the influence of the electric current on the film thickness and the compositions. Using the obtained equations, the existence and the extent of the deposition and the etching by the precursors and their combinations were evaluated.

Chemical Conditions of SiCNO Film Exposed to ClF3 Gas

“…This study used the parallel plate PECVD reactor having 80-mmdiameter upper and lower electrodes for the glow discharge (Soft Plasma Etcher-SE, Meiwafosis Co., Ltd., Tokyo, Japan. ), [10][11][12][13][14] as shown in Fig. 1.…”

“…The Si, C, N and O concentrations have been reported to have a relationship with the electric current and the SiH 3 CH 3 , N 2 and Ar partial pressures. 14 Next, the obtained SiCNO film was placed in the reactor, as shown in Fig. 2a, for the etching.…”

Investigation of the Effects of Different H2SO4, HCI, HNO3 and HCIO4 Liquid Acid Media on the Synthesis of CdTe Semiconductor Thin Films for Solar Cells

“…Different growth methods, such as MBE(molecular beam epitaxy) (15) sputtering (16), ED (17)(18)(19), MOVPE (metal-organic chemical vapor deposition) (20) and chemical vapor deposition (21) have been improved. However, the ED of compound SmC thin films has some advantages.…”