Determination of diffusion length from within a confined region with the use of EBIC

Ong, Venetia; Wu, Dethau

doi:10.1109/16.902735

Cited by 18 publications

(15 citation statements)

References 11 publications

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“…The EBIC technique exhibits the same drawbacks than SEI concerning its application on multiple junctions design sample and unknown design unit study since probing is required. Despite of this drawback compared to SEPC, the EBIC remains a powerful technique for junction characterization since it was reported that junction characteristics such as minority carrier diffusion length (L) and surface recombination velocity can be determined, under certain assumptions, by studying the EBIC signal as a function of the acceleration voltage [36]. Indeed, the diffusion follows the equation exp (-x/L), and the reciprocal to the slope of a EBIC lines can plotted on a logarithmic axis gives L, indicating the scale over which minority carriers have influence (away from electric fields).…”

Section: Comparison Of the Five Delineation Techniquesmentioning

confidence: 99%

Electrical Homo-Junction Delineation Techniques: A Comparative Study

Vivet¹,

Diogo²,

Aubert³

et al. 2016

MSA

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In active semiconductor devices, the junction characteristics are critical for the electrical performance. As an alternative of the atomic force microscopy (AFM)-based electrical techniques which provide unique junction characterization, other methods are dedicated for the delineation of the electrical junction such as the wet chemical etching, the electrochemical plating method, the Seebeck effect imaging (SEI) method, the electron-beam induced current (EBIC) technique and the secondary electron potential contrast (SEPC) method. The aim of this paper is in the one hand to compare these five techniques in term of sample preparation, spatial application range, spatial resolution, simplicity and information displayed. In the other hand, this review aims to provide some guidelines for the appropriate delineation method(s) selection. It was confirmed that chemical based techniques are the simplest junction delineation methods but exhibit some drawbacks in term of spatial resolution and reproducibility. Despite of a limited spatial resolution, it was evidenced that EBIC can provide accurate electrical characterization of the junction. Finally, it was demonstrated that SEPC is the most promising technique providing the higher spatial resolution. The effect of the sample preparation method has been described. Even if the comparison was mainly based on homo-micro-Silicon junctions (n-p and n-p-n-p), the results were also discussed for short SiC junctions. The importance of the analysis context was considered in this paper and analysis flow was suggested for specific analysis cases.

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Section: Comparison Of the Five Delineation Techniquesmentioning

confidence: 99%

Electrical Homo-Junction Delineation Techniques: A Comparative Study

Vivet¹,

Diogo²,

Aubert³

et al. 2016

MSA

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“…The generation volume used a Gaussian model according to Ong and Wu [18], [19]. The beam energy was set to 8 keV.…”

Section: Verificationmentioning

confidence: 99%

“…Once the carrier concentration is known, the device simulator will compute the corresponding current density. The details of the implementation of the generation volume, the setting of the minority carrier diffusion-length value as well as the EBIC simulation using MEDICI can be found in [18] and [20].…”

Section: Verificationmentioning

confidence: 99%

Determination of Diffusion Lengths With the Use of EBIC From a Diffused Junction With Any Values of Junction Depths

Kurniawan

Ong

2006

IEEE Trans. Electron Devices

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Minority carrier diffusion lengths determine the performance of bipolar and photodiode devices. An electron-beaminduced-current (EBIC) method has been widely used to extract this parameter. The extraction of the diffusion lengths involves a p-n junction to collect the minority carriers. The most used configuration, which is called the normal collector, assumes that the junction has an infinitely large junction depth. However, in planar devices, the junction depth is comparable to the diffusion lengths of the material. This paper presents a simple and yet accurate method to determine the diffusion lengths of the material from a diffused junction with any values of junction depths. The diffusion length of the material is extracted from the negative reciprocal of the slope of the EBIC profile in semi-logarithmic plot. It was found that the proposed method is able to extract the diffusion lengths accurately for any values of the junction depths and surface recombination velocities. The maximum error in using this method is about 6%.

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“…To overcome these drawbacks, a two-dimensional ( the setting of the minority carrier diffusion-length value, as well as the EBIC simulation using MEDIC1 can be found in [63], [91], and Appendix D.…”

Section: Chapter 7 Generalized Diffusion Length Measurement Techniqumentioning

confidence: 99%

“…The The generation rate within this area was uniform and was set to 5.22 x loz3 carriers/cm3. The value was calculated using 1.5 nA beam current [63]. The detail implementation in MEDICI can be found in Appendix D. come from the denominator term sinh(p,h), which tend to go to infinity.…”

Section: Medici Simulationsmentioning

confidence: 99%

Device parameters characterization with the use of EBIC

Kurniawan¹

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(UK), for allowing the author to use their EBIC data measurements on the GaN LED. Dr. Grigore Moldovan was also involved in the discussion in developing the technique to determine the edges of the depletion layer of a p-n junction. Next, the author would like to thank Ms Seow-Guee Geok Lian for her help in giving technical supports in IC Design Laboratory 11, where the author worked on his project. The author also would like to express his gratitude to NTU for the research grant to do his further study as a PhD student. Lastly, the author wants to thank Ms Maya Kristandyo for her help in checking the manuscript of the Thesis, as well as the author's family for their continual support and encouragement. " omne quod spirat , laudet Dominum" (Psalmus 150:5)

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Determination of diffusion length from within a confined region with the use of EBIC

Cited by 18 publications

References 11 publications

Electrical Homo-Junction Delineation Techniques: A Comparative Study

Electrical Homo-Junction Delineation Techniques: A Comparative Study

Determination of Diffusion Lengths With the Use of EBIC From a Diffused Junction With Any Values of Junction Depths

Device parameters characterization with the use of EBIC

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