DOI: 10.32657/10356/41843
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Device parameters characterization with the use of EBIC

Abstract: (UK), for allowing the author to use their EBIC data measurements on the GaN LED. Dr. Grigore Moldovan was also involved in the discussion in developing the technique to determine the edges of the depletion layer of a p-n junction. Next, the author would like to thank Ms Seow-Guee Geok Lian for her help in giving technical supports in IC Design Laboratory 11, where the author worked on his project. The author also would like to express his gratitude to NTU for the research grant to do his further study as a Ph… Show more

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