Determination of Diffusion Lengths With the Use of EBIC From a Diffused Junction With Any Values of Junction Depths

Abstract

Minority carrier diffusion lengths determine the performance of bipolar and photodiode devices. An electron-beaminduced-current (EBIC) method has been widely used to extract this parameter. The extraction of the diffusion lengths involves a p-n junction to collect the minority carriers. The most used configuration, which is called the normal collector, assumes that the junction has an infinitely large junction depth. However, in planar devices, the junction depth is comparable to the diffusion lengths of the material. This paper presents a simple and yet accurate method to determine the diffusion lengths of the material from a diffused junction with any values of junction depths. The diffusion length of the material is extracted from the negative reciprocal of the slope of the EBIC profile in semi-logarithmic plot. It was found that the proposed method is able to extract the diffusion lengths accurately for any values of the junction depths and surface recombination velocities. The maximum error in using this method is about 6%.

Thin‐Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

“…[ 13,14 ] Figure 2 c,d shows a top view SEM image and the corresponding EBIC map over the same area, where darker regions correspond to a lower collection current. An electron beam is scanned over a device, and the local current collected is mapped to reveal the presence of defects and junctions.…”

Investigation of the extraction of short diffusion lengths from simulated electron‐beam induced current

“…The Electron-Beam Induced Current (EBIC) technique is commonly used to determine L in semiconductors [4][5][6][7]. Currently, there are various methods and models of extracting L from measurements [1,2,[8][9][10]. For example, EBIC can be measured as the beam is scanned away from or towards a collecting junction [4-7, 9, 10] or as a function of beam energy, E b [8,11].…”

“…A more detailed discussion of α is given in [1]. Later, Kurniawan and Ong [2] considered cases where the junction or depletion depth, h, is nonnegligible and found that the same equation can be applied. They rewrote Eqn.…”

Electron-beam induced current measurements of diffusion length in Si doped MOCVD grown GaN

“…α was found to be a function of the surface recombination velocity, v s . Later, Kurniawan and Ong [3] showed that (1) is also valid for cases where the x d is non-negligible and replaced α with γ to highlight the fact that this parameter is now a function of both v s and x d . L p is extracted from I EBIC by fitting of ln(I EBIC ) to:…”