Determination of diffusion length and surface recombination velocity by light excitation

Hu, Chenming; Drowley, C.I.

doi:10.1016/0038-1101(78)90295-2

Cited by 35 publications

(3 citation statements)

References 7 publications

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“…[6][7][8][9][10] Photocurrent measurements have been used for a long time for the determination of bulk lifetime and surface recombination velocity, 11 for instance in the optical-beam-induced-current (OBIC) technique. 12,13 For what concerns bulk properties, photocurrent measurements have been commonly used for some years in the Elymat technique (electrolytic metal tracer, Ref. 5).…”

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Surface Recombination Velocity from Photocurrent Measurements: Validation and Applications

Polignano

Bellafiore

Caputo

et al. 1999

J. Electrochem. Soc.

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Photocurrent measurements can provide an easy method for evaluating surface recombination velocity and for mapping this quantity over a silicon wafer. This method is validated for the characterization of Si-SiO 2 interfaces by comparison with surface-state density data measured in simultaneously processed capacitors. In addition, destructive and nondestructive approaches to this measurement are discussed and compared. The correlation to be expected between destructive and nondestructive measurements of surface recombination is calculated by a theoretical model and experimentally verified. Finally, surface recombination velocity measurements are used for the characterization of oxidation equipment and processes.

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confidence: 99%

“…Journal of The Electrochemical Society, 146(12) 4640-4646 (1999) S0013-4651(99)04-023-9 CCC: $7.00 © The Electrochemical Society, Inc.…”

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confidence: 99%

Surface Recombination Velocity from Photocurrent Measurements: Validation and Applications

Polignano

Bellafiore

Caputo

et al. 1999

J. Electrochem. Soc.

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“…In all these methods a variety of beam-semi-infinite sample configurations and scanning methods were used and the electron beam was kept constant or modulated in intensity. Recently, optical excitation techniques have been used for characterisation of semiconducting crystals (Hu and Drowley 1978, Trivich etal 1978, Fletcher etal 1980, Mora et a1 1980. In this work, we describe a method for determination of the surface recombination velocity in a semiconductor layer by using optical excitation of a Schottky barrier.Consider back-side monochromatic illumination of a Schottky barrier-semiconductor sandwich and assume flat bands at the illuminated surface.…”

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confidence: 99%