Determination of surface recombination velocity in semiconductor layers by light excitation of Schottky barriers

Dimitriadis, C. A.

doi:10.1088/0022-3727/16/7/020

Cited by 4 publications

(1 citation statement)

References 5 publications

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“…The relations ((3) and (4) in [7]) and cDz(x, y) ( ( 5 ) and (6) in 1111) were transformed in a difference of Gaussians for convenient niathematical use. The values of S, determined by electron beam [12, 131 and light excitation methods [14] greatly depend on the generation volume model, and a determination with an experimentally obtained generation source seems to be useful.…”

Section: Introductionmentioning

confidence: 99%

The importance of the excitation volume for the determination of the minority carrier diffusion length

Fiddicke

Oelgart

1985

phys. stat. sol. (a)

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A new model is proposed for the calculation of the electron beam induced barrier current (BC) on surfaces perpendicular to the p‐n junction involving an experimentally obtained electron‐hole pair generation source. The BC profiles computed describe excellently the experimentally found results also for high primary energies of electrons and short diffusion lengths. Especially the part concave from the bottom near the p‐n junction and the ratio of the BC values for various primary energies at constant positions can be explained with the proposed model. The investigation of GaP:N diodes shows the influence of the Zn‐diffusion conditions on the diffusion length in the n‐ and p‐region.

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Section: Introductionmentioning

confidence: 99%