Determination of deformation-potential constants by Brillouin scattering of light

Käräjämäki, E.; Laiho, R.; Levola, T.; Bairamov, B. H.; Goltsev, A. V.; Toporov, T.

doi:10.1103/physrevb.29.4508

Cited by 23 publications

(20 citation statements)

References 11 publications

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“…39 The resonance effect greatly enhanced the scattering intensity not only for the LA Brillouin lines [44][45][46] but also for the both types of QELS component. However, we could not find differences in both line shapes and linewidths of all the scattering components within the experimental error when the different excitation wavelengths were employed.…”

Section: A Results For Backscatteringmentioning

confidence: 98%

Quasielastic light scattering in rutile,ZnSe, silicon, andSrTiO3

et al. 2006

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Quasielastic light scattering ͑QELS͒ has been investigated in the crystals of TiO 2 ͑rutile͒, ZnSe, silicon, and SrTiO 3 . The temperature dependence of the linewidth for the QELS has been measured in detail by backward light scattering interferometry and by impulsive stimulated thermal scattering technique in the temperature range from 5 to 670 K. The quasielastically scattered spectra observed consist of two components, which can be classified into two types, namely, types I and II, depending on the linewidth. The analyses have shown that the linewidth of the QELS I changes from the well-known q 2 to a q 1 dependence with either decreasing temperature or increasing q, where q is the wave-vector transfer in the scattering experiment. It has been found that the linewidth of the QELS I in arbitrary phonon regimes including "hydrodynamic," "collisionless," and "intermediate" can be roughly estimated solely in terms of average sound velocity and the "phonon Knudsen number" ql, where l is the mean free path of thermal phonons. A broad doublet spectrum, which was first reported by Hehlen et al. in Phys. Rev. Lett. 75, 2416 ͑1995͒, has been observed in SrTiO 3 at low temperatures, and its origin has been also discussed in terms of phonon Knudsen number.

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Section: A Results For Backscatteringmentioning

confidence: 98%

Quasielastic light scattering in rutile,ZnSe, silicon, andSrTiO3

et al. 2006

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“…Observed giant enhancement can be explained by the sum of the partial resonant contributions of the each individual transition of the many confined exciton bands. First experimental observation of and theoretical description of the multi-zone exciton contributions to the resonance scattering processes in a wide excitation energy range was demonstrated for the case of ZnSe 33,34) and AgI. 35) The decisive role of the multi-zone excitons has recently become widely used by numerous researchers to recalculate the absolute value of the resonance Raman scattering efficiency for comparison with the corresponding experimental data performed early with the e-h uncorrelated theory for a number bulk compounds as well as (2D), (1D), and (0D) low dimensional structures.…”

Section: Inelastic Light Scattering By P-ppm's and Acousticmentioning

confidence: 99%

Structural, Optical, and Electrical Properties of Semiconductor Compounds Studied by Means of Inelastic Light Scattering from Phonon, Electron, and Coupled Electron–Phonon Excitations: From Bulk to Nanoscale Structures

Bayramov

Irmer

Toporov

et al. 2011

Jpn. J. Appl. Phys.

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We show results of our systematic investigation by means of quasi-elastic and inelastic laser light scattering (QEILS) of electron- and hole–phonon interactions as well as charge- and spin-density scattering mechanisms from hole gas fluctuations including their overlapping with phonon features by using near infrared excitation of doped bulk p-GaAs and self-assembled InAs/GaAs quantum dot (QD) structures. Additionally, results of our study of CdS and CdSe/ZnS QDs, multi-functionalized by peptides possessing strict affinity to integrins of MDA-MB-435 cancer cells are also presented.

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“…In early 1980s, Ioffe Institute started the research of a new type of inelastic resonant light scattering. Alternatively to the traditionally studied and usually interpreted two-band resonance enhancement of inelastic light scattering intensity (see, for example, [1][2][3][4][5]), a multiband resonance enhancement of inelastic light scattering intensity was predicted and discovered [6,7]. Initially, the multiband nature of the enhancement was justified and experimentally proved for Mandelstam−Brillouin inelastic resonant light scattering by acoustic phonons with wave vectors corresponding to point Ŵ of the Brillouin zone using ZnSe crystals having a zinc blende-type structure [6,7].…”

Section: Introductionmentioning

confidence: 99%

“…Alternatively to the traditionally studied and usually interpreted two-band resonance enhancement of inelastic light scattering intensity (see, for example, [1][2][3][4][5]), a multiband resonance enhancement of inelastic light scattering intensity was predicted and discovered [6,7]. Initially, the multiband nature of the enhancement was justified and experimentally proved for Mandelstam−Brillouin inelastic resonant light scattering by acoustic phonons with wave vectors corresponding to point Ŵ of the Brillouin zone using ZnSe crystals having a zinc blende-type structure [6,7]. In addition, all exciton correlations both for interband and band-toband transitions between conduction band Ŵ 6 , fourfold degenerate valence band Ŵ 8 and doubly degenerate zone Ŵ 7 split off by spin-orbital interaction were considered for the first time.…”

Section: Introductionmentioning

confidence: 99%

Multi-zone resonance spectrometry of inelastic electron scattering of light and the manifestation of strong spin-orbit interaction in nanostructures with quantum dots

Toporov V. V.,

Bayramov B. X.

2023

Physics of the Solid State

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Highly sensitive methods of inelastic light scattering spectrometry have been developed to detect individual photons in the visible and near-infrared spectral ranges (0.4-1.35) μm. Precision optical measurements of vibrational and electronic states of nanostructures with quantum objects are performed, using the example of quantum-dimensional nanoheterostructures (311)In si-GaAs/InAs with InAs quantum dots. A distinctive attractive feature of such structures with a degenerate valence band of symmetry 8 is the presence of a strong spin-orbit interaction. In this case, the intrinsic moment of the holes can effectively interact with the electric field of the incident light wave. It was found that such interaction causes intense luminescence and inelastic scattering of the light wave in the IR region of the 0.9-1.35 μm spectrum. Effective generation of nonequilibrium electron-hole (e-h) plasma with concentrations n=p=1.0·1017 cm-3 and T_e=T_h=25 K,was revealed under resonant excitation conditions, while the lattice temperature T_L=5.1 K. New mechanisms have been discovered for the formation of an abnormally intense integration spectrum of multiplex inelastic light scattering of a rather complex shape formed by various separable resonant contributions of the processes of quasi-elastic scattering by charge carriers, light scattering by acoustic plasmons of electron-hole plasma, as well as inelastic intra- and inter-band light scattering by heavy holes. It has been established that the anomalous intensity gain of such multi-zone selective resonant light scattering is more than 105 times higher than the intensity of Thomson light scattering on individual charge carriers. There is agreement between the estimated calculated and experimental spectra, and for the most part for the difficult-to-interpret significant width of the observed light scattering line. It is shown that new mechanisms of various contributions to the formation of scattered photon radiation are important diagnostic elements that are clearly manifested in the spectra of the resulting enhanced inelastic light scattering. Keywords: nanostructures, quantum objects, resonant scattering of light by charge carriers, exchange interaction, plasma diagnostics.

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Determination of deformation-potential constants by Brillouin scattering of light

Cited by 23 publications

References 11 publications

Quasielastic light scattering in rutile,ZnSe, silicon, andSrTiO3

Quasielastic light scattering in rutile,ZnSe, silicon, andSrTiO3

Structural, Optical, and Electrical Properties of Semiconductor Compounds Studied by Means of Inelastic Light Scattering from Phonon, Electron, and Coupled Electron–Phonon Excitations: From Bulk to Nanoscale Structures

Multi-zone resonance spectrometry of inelastic electron scattering of light and the manifestation of strong spin-orbit interaction in nanostructures with quantum dots

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