2006
DOI: 10.1103/physrevb.73.024303
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Quasielastic light scattering in rutile,ZnSe, silicon, andSrTiO3

Abstract: Quasielastic light scattering ͑QELS͒ has been investigated in the crystals of TiO 2 ͑rutile͒, ZnSe, silicon, and SrTiO 3 . The temperature dependence of the linewidth for the QELS has been measured in detail by backward light scattering interferometry and by impulsive stimulated thermal scattering technique in the temperature range from 5 to 670 K. The quasielastically scattered spectra observed consist of two components, which can be classified into two types, namely, types I and II, depending on the linewidt… Show more

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Cited by 29 publications
(19 citation statements)
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“…If CP is due to the second order Raman effect, its bandwidth usually extends to a few cm −1 at room temperature. 16,30 Our former vibrational studies of KNBO showed that bandwidths of the Raman lines very quickly increase with increasing temperature for this material up to even 30 cm −1 at 550 K temperature. 33 Therefore, it can be expected that the second order Raman processes would lead to appearance of a very broad CP at high temperatures.…”
Section: A Central Peaksmentioning
confidence: 84%
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“…If CP is due to the second order Raman effect, its bandwidth usually extends to a few cm −1 at room temperature. 16,30 Our former vibrational studies of KNBO showed that bandwidths of the Raman lines very quickly increase with increasing temperature for this material up to even 30 cm −1 at 550 K temperature. 33 Therefore, it can be expected that the second order Raman processes would lead to appearance of a very broad CP at high temperatures.…”
Section: A Central Peaksmentioning
confidence: 84%
“…14,16,[28][29][30][31] If CP is due to heat conduction process, the FWHM should be proportional to the square of the wave vector transfer. 28,30 The small size of the studied crystals did not allow us to check the dependence of the FWHM on the wave vector.…”
Section: A Central Peaksmentioning
confidence: 99%
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“…Развитые подходы многозонного резонансного рассеяния света [24][25][26][27] . В последующие годы теория многозонного резонансно-го рассеяния света и развитые подходы [24][25][26][27] были подтверждены для многих полупроводниковых матери-алов -от объемных (например, [7]) до низкоразмер-ных наноструктур, включая квантовые точки [8,[28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43]. В низкоразмерных наноструктурах формирование боль-шого числа экситонных уровней энергии обусловливает наиболее яркое проявление механизма многозонного резонансного неупругого рассеяния света.…”
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