Determination of band offsets at strained NiO and MgO heterojunction for MgO as an interlayer in heterojunction light emitting diode applications

X‐ray photoelectron spectroscopy characterization of band offsets of MgO/Mg2Si and SiO2/Mg2Si heterojunctions

“…It can be seen that the Mg 2p peak of MgO is located at 50.49 eV and the peak shape is very symmetrical, which indicates that the MgO film contains uniform Mg-O bond. This uniformity was also observed by Singh et al 34 and Liu et al 22 According to the linear extrapolation method, it can be deduced that the VBM of MgO is 2.72 eV, which is very consistent with the report of Liu et al 25 The energy difference between both is 47.77 eV. Figure 4c…”

X-Ray Photoemission Investigation of the Beryllium Oxide Band Alignment with Magnesium Oxide and Estimates for Other Insulating and Conducting Oxides

“…Utilizing the previously reported MgO/X VBO values summarized in Table II, we calculate the BeO VBO with ZnO, NiO, Ga 2 O 3 , InGaZnO 4 , and TiO 2 to be 1.15 ± 0.4, 2.4 ± 0.4, 0.3 ± 0.2, 0.9 ± 0.2, and 1.7 ± 0.2 eV, respectively. Utilizing the reported bandgaps for each oxide material (63)(64)(65)(66)(67)(68)(69)(70)(71)(72)(73)(74), we can additionally calculate the respective CBO for each interface. Both the calculated CBO and VBO values are summarized in Table III.…”