Structural investigations of pulsed laser-deposited NiO epitaxial layers under different fluence values

Singh, S. D.; Patra, N.; Singh, M. N.; Mukherjee, C.; Jha, S. N.; Sinha, A. K.; Ganguli, Tapas

doi:10.1007/s10853-018-3004-y

Cited by 3 publications

(6 citation statements)

References 24 publications

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“…Increase in FL causes increase in out-of plane lattice parameters in NiO thin films grown on Al2O3 (0001) [39]. In our investigation, under a constant FL the strain accommodation in the film decreased as tF increased, and a NiO film that had tF = 200 nm was totally relaxed.…”

Section: Nickel Monoxidementioning

confidence: 51%

“…The sharp peak reveals an atomically long range-ordered area. This feature has been never seen in previous works on NiO films [32][33][34][35][36][37][38][39][40][41]. The emergence of the broad component shows the formation of sub-grains (mosaic structure); this process breaks the long-range atomic arrangement.…”

Section: Nickel Monoxidementioning

confidence: 57%

“…However, this method applies high-energy pulses which may cause undesirable defects in the structure, and thereby change the electronic behavior of the films. PLD has been used to deposit various binary compounds [32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47].…”

Section: Introductionmentioning

confidence: 99%

“…It is proven that there should be an optimum temperature to grow NiO with highest quality on Al2O3 substrate [38]. Increasing the laser fluence FL strongly affects lattice parameters of NiO film grown on Al2O3 [0001] substrates by increasing the Ni-Ni bond length [39]. By referring to previous works and by tuning deposition parameters we have tried to obtain NiO films with atomically long-range ordering and a perfect smooth surface, and to study the effect of thickness and TG on the structural evolution and strain accommodation in the film structure.…”

Section: Introductionmentioning

confidence: 99%

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Pulsed Laser Deposition of Rocksalt Magnetic Binary Oxides

et al. 2019

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Magnetic binary oxides with the rocksalt structure constitute an important class of materials for potential applications as electronic or electrochemical devices. Moreover, they often become a theoretical playground, due to the simple electronic and crystal structures, in the quest for novel phenomena. For these possibilities to be realized, a necessary prerequisite would be to grow atomically ordered and controllably-strained binary oxides on proper substrates. Here we systematically explore the use of pulsed laser deposition technique (PLD) to grow three basic oxides that have rocksalt structure but different chemical stability in the ambient atmosphere: NiO (stable), MnO (metastable) and EuO (unstable). By tuning laser fluence FL, an epitaxial single-phase NiO thin-film growth can be achieved in a wide range of growth temperatures 10 ≤ TG ≤ 750 °C. At the lowest TG, the out-of-plane strain raises to 1.5%, which is five times higher than in NiO film grown at 750 °C. MnO thin films that had long-range order were successfully deposited on the MgO substrates after appropriate tuning of deposition parameters. The growth of MnO phase was strongly influenced by FL and the TG. EuO films with satisfactory quality were deposited by PLD after oxygen availability had been minimized. Synthesis of EuO thin films at rather low TG = 350 °C prevented thermally-driven lattice relaxation and allowed growth of strained films. Overall, PLD was a quick and reliable method to grow binary oxides with rocksalt structure in high quality that can satisfy requirements for applications and for basic research.Thin-film deposition is a technique that can be used to control strain in materials [22]. The Curie temperature TC of EuO thin film is strongly dependent on the strain and on film thickness tF [23]. Dislocations in NiO thin films locally change the magnetic ordering from antiferromagnetic to ferromagnetic [24]. Such 'ferromagnetic' dislocations originate from a local non-stoichiometry at in dislocation cores where Ni is deficient. A slight deviation from the stoichiometry also changes the conduction behavior in NiO thin films. Oxygendeficient EuO shows metallic behavior with a substantial increase of the TC to 120 K [25]. The deposition of high-quality magnetic binary oxides, and the ability to control the level of strain and density of defects in their structure, are challenging tasks in materials science and solid-state physics.Pulsed-laser deposition technique (PLD) has many advantages for growing thin films of high-quality oxides [26][27][28][29][30][31]. PLD can preserve the stoichiometry of the film composition,

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Section: Nickel Monoxidementioning

confidence: 51%

Section: Nickel Monoxidementioning

confidence: 57%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Pulsed Laser Deposition of Rocksalt Magnetic Binary Oxides

et al. 2019

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“…Therefore, the better crystal interface, the more apparent Pendellösung interference fringes. [24,25] The diffraction peak of sample 2 in ω-2θ scanning is more obvious, which also indicates its better crystal quality.…”

Section: Xrd Testmentioning

confidence: 96%

A MOVPE method for improving InGaN growth quality by pre-introducing TMIn*

Cao¹,

Zhao²,

Yang³

et al. 2021

Chinese Phys. B

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We propose a metal organic vapor phase epitaxy (MOVPE) method of pre-introducing TMIn during the growth of u-GaN to improve the subsequent growth of InGaN and discuss the impact of this method in detail. Monitoring the MOVPE by the interference curve generated by the laser incident on the film surface, we found that this method avoided the problem of the excessive InGaN growth rate. Further x-ray diffraction (XRD), photoluminescence (PL), and atomic force microscope (AFM) tests showed that the quality of InGaN is improved. It is inferred that by introducing TMIn in advance, the indium atom can replace the gallium atom in the reactor walls, delivery pipes, and other corners. Hence the auto-incorporation of gallium can be reduced when InGaN is grown, so as to improve the material quality.

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Enhancing ultraviolet-to-visible rejection ratio by inserting an intrinsic NiO layer in p-NiO/n-Si heterojunction photodiodes

Hwang

2020

Nanotechnology

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Conventionally, p-NiO/n-Si (p-n) heterojunction photodiodes (HPDs) exhibit a larger visible response than the ultraviolet response due to the thick Si substrate; hence, it is used as a broadband photodetector with a poor ultraviolet (UV)-to-visible rejection ratio. Herein, an intrinsic NiO (i-NiO) layer is inserted between the p-NiO and the n-Si substrate to fabricate p-NiO/i-NiO/n-Si (p-i-n) HPDs, significantly suppressing leakage current and visible response. Compared with the conventional p-n HPDs, the insertion of the i-NiO layer significantly reduces leakage current by approximately 241 times and enhances the rectification ratio from 13.8 to 3228 for the p-n and p-i-n HPDs. The insertion of an i-NiO layer not only increases the UV-response but also suppresses the visible response. These issues enhance the UV-to-visible rejection ratio from 72.2 in p-n HPDs to 915.3 in p-i-n HPDs. The p-NiO reveals a poorer crystalline structure than the i-NiO film because the Ag dopants accumulate at the grain boundary and inhibit crystalline growth. The Ag diffusion in the Si substrate causes defect states within the Si bandgap, whereas it is retarded by the i-NiO layer in the p-i-n HPDs. The poor crystallinity in the p-NiO and defect states within the Si bandgap contributes to a high leakage current and visible response in p-n HPDs. The p-i-n HPDs demonstrate a higher UV-response due to absorption by the i-NiO layer. Because visible light cannot be absorbed by the i-NiO layer, visible response is suppressed in p-i-n HPDs.

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Structural investigations of pulsed laser-deposited NiO epitaxial layers under different fluence values

Cited by 3 publications

References 24 publications

Pulsed Laser Deposition of Rocksalt Magnetic Binary Oxides

Pulsed Laser Deposition of Rocksalt Magnetic Binary Oxides

A MOVPE method for improving InGaN growth quality by pre-introducing TMIn*

Enhancing ultraviolet-to-visible rejection ratio by inserting an intrinsic NiO layer in p-NiO/n-Si heterojunction photodiodes

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