“…In typical Si homo p-n/p-i-n structured devices, however, the carriers generated in the neutral region exhibit no response owing to recombination, which simultaneously lowers the overall performance and narrows the spectral range of photodetection due to the self-filtering effects. , Notably, such limitations may be avoided in Si-based heterojunction PDs consisting of the Si and a wide bandgap semiconductor, where the latter one induces a built-in electric field at the heterojunction interface without absorbing the incident light. In recent years, Si-based heterojunction PDs combining with various wide bandgap semiconductors such as ZnO, , SnO 2 , , and NiO , involving careful design of device structures and interfacial engineering have been explored to realize efficient and broadband photodetection. Notably, the rapid progress of power conversion efficiency of lead halide perovskite solar cells recently has witnessed that efforts have been devoted to the scalable and controlled synthesis of the above-mentioned wide bandgap oxides. , Typically, the controlled growth of uniform and large-area NiO nanocrystal thin films with a thickness as small as sub-100 nm by a simple low-temperature solution growth method has been reported. − Meanwhile, the as-prepared NiO nanocrystal thin films have further been shown to be highly transparent over the UV–vis-NIR spectral range , and intrinsic p-type conductivity because of the facile formation of native Ni vacancies (V Ni ). , Theoretically, the PDs have working principles similar to those of the solar cells, where the efficient generation and extraction of photoexcited carriers within the active layer are mainly concerned.…”