Detection of two dangling bond centers with trigonal symmetry at and below a (100) Si/SiO2 interface

Langhanki, B.; Greulich‐Weber, S.; Spaeth, J.‐M.; Michel, Jean-Pierre

doi:10.1063/1.1377853

Cited by 5 publications

(4 citation statements)

References 14 publications

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“…The main effects to consider are, thus, adsorption and oxidation on surfaces. Oxidation would provide a nonreversible process with the occurrence of the fingerprint of the well-known P b -centers (Si-O/Si interface dangling bond states [9,10]), but are not reported in the EPR measurements. Instead, under hydrogenation an increase of the EPR-resonance at g=2.0052 is observed [8,11].…”

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confidence: 95%

Ab initiog ‐tensor calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces

Gerstmann

Rohrmüller

Mauri

et al. 2010

Phys. Status Solidi (c)

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Ab initio calculations of the electronic g ‐tensor of paramagnetic states at surfaces are presented taking the adsorption of hydrogen atoms at silicon surfaces as an example. We show that for silicon surfaces with different hydrogen coverages, the g ‐tensor is by far more characteristic than the hyperfine splitting of the Si dangling bonds or the adsorbed H atoms. This holds also in the case of powder spectra (e.g. amorphous or microcrystalline material) where only the angular average of the spectra is available from experiments. Hence, the ab initio calculation of the g ‐tensor should be in general a basic key to a better understanding of the microscopic structure of paramagnetic surfaces or interfaces (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 95%

Ab initiog ‐tensor calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces

Gerstmann

Rohrmüller

Mauri

et al. 2010

Phys. Status Solidi (c)

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“…1 In 1971, dangling bond defects (P b -centers) were found at the interface, 2 and they were classified into several different types: P b for (111) and (110) interfaces and P b0 and P b1 for (100) interfaces. [3][4][5] These discoveries have stimulated experimental studies to identify structures, energy levels, and densities of the interface defects, [6][7][8][9][10][11][12][13][14] and theoretical calculations on the microscopic structures of the interface and defects. [15][16][17][18] In addition, E'-center produced by irradiation and other defects involving nitrogen, phosphorous, and boron have been identified at the interface.…”

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confidence: 99%

Identification of a paramagnetic recombination center in silicon/silicon-dioxide interface

Matsuoka

Vlasenko

et al. 2012

Applied Physics Letters

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A paramagnetic recombination center having an orthorhombic symmetry with g[110] = 2.0095(2), g[001] = 2.0038(2), and g[1¯10] = 2.0029(2) is found at the interface between silicon and native oxide. The center is referred to Pm center and observed by a spin dependent recombination based electron paramagnetic resonance detection that has the sensitivity of ∼1011 spins/cm2. The employment of an isotopically enriched 28Si sample with the concentration of 29Si nuclear spins reduced to 0.017% leads to narrowing of the resonance line. This narrowing is the key for the accurate determination of the angular dependence of the g-factor.

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“…The origin of signal (1) is unclear so far. EPR signal (2) shows the typical intensity distribution and hyperfine splitting of Si dangling bond defects [9][10][11][12]. The intensity of the dangling bond signal (2) decreases about ten times in nc-Si(EtOH) and the signal disappears completely in nc-Si:H x .…”

Section: Resultsmentioning

confidence: 96%

Silicon nano particles: Surface characterization, defects and electronic properties

Hahn

Heimfarth

Roewer

et al. 2008

Physica Status Solidi (b)

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Nano scaled silicon particles (nc‐Si) having a diameter of about 3 to 9 nm were synthesized by direct reduction of SiCl4 with H2 in a LaCl3 matrix by a vapour deposition (CVD) route. The particles were characterized by diffuse reflection fourier transform spectroscopy (DR/FT‐IR), photoluminescence (PL), electron paramagnetic resonance (EPR) and microwave detected photo induced current transient spectroscopy (MD‐PICTS). EPR measurements identified dangling bond defects on the surface of as‐prepared nc‐Si particles in the LaCl3 matrix. The number of dangling bonds significantly decreases upon extraction of the nc‐Si with ethanol. As expected, the dangling bonds disappear completely after treatment with 1% HF solution. A strong correlation between presence of dangling bond defects and electronic properties was found. The temperature dependent photoconductivity in conjunction with the EPR and PL results allowed us to analyze the defect structure of the nc‐Si particles. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Detection of two dangling bond centers with trigonal symmetry at and below a (100) Si/SiO2 interface

Cited by 5 publications

References 14 publications

Ab initiog ‐tensor calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces

Ab initiog ‐tensor calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces

Identification of a paramagnetic recombination center in silicon/silicon-dioxide interface

Silicon nano particles: Surface characterization, defects and electronic properties

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