2010
DOI: 10.1002/pssc.200982462
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Ab initiog ‐tensor calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces

Abstract: Ab initio calculations of the electronic g ‐tensor of paramagnetic states at surfaces are presented taking the adsorption of hydrogen atoms at silicon surfaces as an example. We show that for silicon surfaces with different hydrogen coverages, the g ‐tensor is by far more characteristic than the hyperfine splitting of the Si dangling bonds or the adsorbed H atoms. This holds also in the case of powder spectra (e.g. amorphous or microcrystalline material) where only the angular average of the spectra is availab… Show more

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Cited by 26 publications
(25 citation statements)
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References 13 publications
(18 reference statements)
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“…Turning briefly to other spectroscopic techniques, first-principles calculations have been applied to the study of electron paramagnetic resonance (EPR) for example phosphorus defects at the Si-SiO 2 interface [74] and hydrogen vacancies on a silicon surface [75].…”
Section: Other Spectroscopiesmentioning
confidence: 99%
“…Turning briefly to other spectroscopic techniques, first-principles calculations have been applied to the study of electron paramagnetic resonance (EPR) for example phosphorus defects at the Si-SiO 2 interface [74] and hydrogen vacancies on a silicon surface [75].…”
Section: Other Spectroscopiesmentioning
confidence: 99%
“…The EPR/ENDOR parameters are calculated in scalar-relativistic approximation using the gauge-including projector augmented plane wave (GI-PAW) approach [34] as implemented in the QUANTUM-ESPRESSO package [35]. For the g-tensor calculation spin-orbit coupling is taken into account in linear magnetic response, whereby the deviation of the elements of the g tensor from the free-electron value 2.002 319 can be described in a physically meaningful way by the spin currents j ( r) induced by the external magnetic field [24]. Note that at least 4 × 4 × 4 k-point samplings are necessary to obtain well converged elements of the electronic g tensor.…”
Section: Computationmentioning
confidence: 99%
“…Various paramagnetic defects have been evidenced in as-grown and irradiated samples but due to the lack of resolved hyperfine (hf) interaction and precise g-tensor measurements the so-called deep donor defects could not be identified. The only intrinsic defect clearly identified by magnetic resonance spectroscopy is the Ga interstitial [3]; it presents a very large central hf interaction which has been successfully modeled [24], whereas defects such as V Ga , V N , (V Ga -V N ), and N int have so far escaped clear identification. As ODMR measurements do not allow the determination of absolute defect concentrations their introduction rates could neither be established.…”
Section: Introductionmentioning
confidence: 99%
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“…The g-tensor is computed by the GI-PAW formalism [11]. With these methods, EPR parameters can be reliably calculated [12,13]. The total energy of charged systems was corrected to account for supercell artifacts [14]; a representative value of 0.1 eV was chosen from test calculations.…”
Section: Electronic Structure Calculationsmentioning
confidence: 99%