Using electrical detection of electron paramagnetic resonance (EDEPR), two defect centers located at the Si (100)/SiO2 interface and in regions several μm below the silicon surface have been observed at a low temperature. Improvements in the EDEPR measurement technique enabled the experimental detection of the g-factor anisotropy of two centers, labeled Pba and Pbb. Both appear with a [111]-oriented, trigonally symmetric g-tensor with g∥=2.0008/g⊥=2.0098 and g∥=1.9974/g⊥=2.0160, respectively (Δg=±0.0004). The data of the Pba center are very similar to those of the well known Pb0 center occurring on (100) oriented silicon. The location of the center which is significantly below the (100)Si/SiO2 interface is discussed.

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