Magnetic resonance and FTIR studies of shallow donor centers in hydrogenated Cz-silicon

Multi-frequency electron paramagnetic resonance (EPR) measurements between 9 and 140 GHz as well as Hall measurements were performed on a series of nominally undoped high-purity semi-insulating (HPSI) 4H-SiC. The investigations in a temperature range from 4 K to 300 K were focused on the photosensitive intrinsic X-defect residing at two inequivalent lattice sites (X h and X k ). Photo-EPR and Hall effect measurements indicate donor-like energy levels at 1.26 ± 0.06 eV and 1.36 ± 0.06 eV below the conduction band for X h and X k , respectively. The EPR spectra recorded at 77 K and at 9 GHz consist of superimposed EPR lines, which were characterized by axially symmetric gtensors and resolved hyperfine (hf) lines. The hf interactions determined are identical to those published earlier in two independent works for the carbon vacancy in a single positive charge state. However, it is a surprising fact that for one hf line the intensity ratio is different in all works. With the help of additional theoretical investigations, these variations are tentatively assigned to the contamination of a sample-dependent fraction of carbon vacancies with hydrogen.

show abstract

Section: Discussionmentioning

confidence: 55%

Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiC

Kalabukhova

Лукин

Савченко

et al. 2006

MSF

View full text Add to dashboard Cite

show abstract

“…The most probable candidate is hydrogen, which e.g. also in silicon provokes a small disturbance of defects, introduced by sample preparation and only hardly observable with EPR (Langhanki et al, 2001). This conclusion is supported by the ionization energy of X-defect which is close to that calculated for V C with adjacent hydrogen (V C +H) (Aradi et al, 2001;Gali et al, 2003) and has significant higher ionization energy than that known for EI5/EI6 center, see Table 2.…”

Section: Satellite Line Number 1)mentioning

confidence: 99%

Identification and Kinetic Properties of the Photosensitive Impurities and Defects in High-Purity Semi-Insulating Silicon Carbide

Савченко¹,

Shanina²,

Kalabukhova³

2011

Properties and Applications of Silicon Carbide

View full text Add to dashboard Cite

Magnetic resonance and FTIR studies of shallow donor centers in hydrogenated Cz-silicon

Cited by 2 publications

References 13 publications

Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiC

Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiC

Identification and Kinetic Properties of the Photosensitive Impurities and Defects in High-Purity Semi-Insulating Silicon Carbide

Contact Info

Product

Resources

About