Detection of NO2 down to ppb Levels Using Individual and Multiple In2O3 Nanowire Devices

Zhang, Daihua; Liu, Zuqin; Li, Chao; Tang, Tao; Liu, Xiaolei; Han, Song; Lei, Bo; Zhou, Chongwu

doi:10.1021/nl0489283

Cited by 852 publications

(547 citation statements)

References 21 publications

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“…In recent years, field-effect transistors have been suggested as an alternative sensing technology [4,5]. A wide variety of semiconductors has been investigated for NO 2 sensing, such as amorphous organic semiconductors [6,7], porous silicon [8,9], silicon nanowires [10], carbon nanotubes [11][12][13], and metal oxide nanowires [14]. In all cases, changes in current upon NO 2 exposure have been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Andringa

Vlietstra

Smits

et al. 2012

Sensors and Actuators B: Chemical

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Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors Andringa, Anne-Marije; Vlietstra, Nynke; Smits, Edsger C. P.; Spijkman, Mark-Jan; Gomes, Henrique L.; Klootwijk, Johan H.; Blom, Paul W. M.; de Leeuw, Dago M. Link to publication in University of Groningen/UMCG research database Citation for published version (APA): Andringa, A-M., Vlietstra, N., Smits, E. C. P., Spijkman, M-J., Gomes, H. L., Klootwijk, J. H., ... de Leeuw, D. M. (2012). Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors. Sensors and actuators b-Chemical, 171(27), 1172-1179. DOI: 10.1016/j.snb.2012 Copyright Other than for strictly personal use, it is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license (like Creative Commons).Take-down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Here we investigate the dynamics of charge trapping and recovery as a function of temperature by monitoring the threshold voltage shift. The threshold voltage shifts follow a stretched-exponential time dependence with thermally activated relaxation times. We find an activation energy of 0.1 eV for trapping and 1.2 eV for detrapping. The attempt-to-escape frequency and characteristic temperature have been determined as 1 Hz and 960 K for charge trapping and 10 11 Hz and 750 K for recovery, respectively. Thermally stimulated current measurements confirm the presence of trapped charge carriers with a trap depth of around 1 eV. The obtained functional dependence is used as input for an analytical model that predicts the sensor's temporal behavior. The model is experimentally verified and a real-time sensor has been developed. The perfect agreement between predicted and measured sensor response validates the methodology developed. The analytical description can be used to optimize the driving protocol. By adjusting the operating temperature and the duration of charging and resetting, the response time can be optimized and the sensitivity can be maximized for the desired partial NO 2 pressure window.

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Section: Introductionmentioning

confidence: 99%

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Andringa

Vlietstra

Smits

et al. 2012

Sensors and Actuators B: Chemical

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“…The high doping level also explains the lack of UV response of these ITO nanowire devices (Figure 5b) and the insensitivity to the ambient environment (see Supporting Information). Contrary to undoped In 2 O 3 nanowires which are very sensitive to UV light due to photogeneration of carriers, 24,25 the ITO nanowire device shows only ∼1.0% change in conductance when illuminated by UV light, even though the photon energy of the applied UV source (254 nm, 4 W) is clearly above the band gap of ITO. This lack of UV response is a direct result of the high starting carrier concentration.…”

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confidence: 98%

High-Performance Transparent Conducting Oxide Nanowires

et al. 2006

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We report the growth and characterization of single-crystalline Sn-doped In 2 O 3 (ITO) and Mo-doped In 2 O 3 (IMO) nanowires. Epitaxial growth of vertically aligned ITO nanowire arrays was achieved on ITO/yttria-stabilized zirconia (YSZ) substrates. Optical transmittance and electrical transport measurements show that these nanowires are high-performance transparent metallic conductors with transmittance of ∼85% in the visible range, resistivities as low as 6.29 × 10 -5 Ω·cm and failure-current densities as high as 3.1 × 10 7 A/cm 2 . Such nanowires will be suitable in a wide range of applications including organic light-emitting devices, solar cells, and field emitters. In addition, we demonstrate the growth of branched nanowire structures in which semiconducting In 2 O 3 nanowire arrays with variable densities were grown epitaxially on metallic ITO nanowire backbones.One-dimensional (1D) nanostructures such as nanowires, nanorods, and nanobelts have become the focus of intensive investigation in the past decade as potential building blocks for nanoscale devices and sensors. 1-5 Along with group IV and III-V materials, metal oxide (including In 2 O 3 , SnO 2 and ZnO) nanowires have been widely studied due to their excellent electrical and optical properties and ease of fabrication. [6][7][8] In these studies the metal oxide nanowires are typically not intentionally doped, and the carriers are normally generated by structural defects such as oxygen deficiencies. As a result, the devices behave as wide band gap semiconductors whose performance is influenced by the surrounding environment. 8 On the other hand, intentional doping can greatly modify the device properties and yield new device applications. One such example is tin-doped indium oxide (ITO), in which metal-like behavior is achieved when In 2 O 3 is degenerately doped by Sn. Due to its high conductivity and high transmittance in the visible spectral region, 9 ITO has become by far the most important transparent conducting oxide material, and ITO films have found applications in various optoelectronic devices such as flatpanel displays, solar cells, and light-emitting diodes. [10][11][12] The ability to obtain highly transparent and highly conducting ITO nanowires may potentially further enhance the performance of such devices due to the increased effective device area using nanowire electrodes. Furthermore, similar to NiSi and TaSi 2 nanowires, 13,14 the highly conducting ITO nanowires may also be used as interconnects in integrated nanocsale devices.The growth of ITO nanowires/nanorods has been reported by several groups since the first study on In 2 O 3 nanobelts in 2001. [15][16][17][18][19][20][21] However, detailed electrical characterizations have not been reported, and it is not clear whether these ITO nanowire/nanorods have the desired electrical properties. For example, the only reported resistivity value is ∼0.4 Ω‚cm, 18 which is several orders higher than that can be obtained in commercially available ITO films 9 and clearly too high ...

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“…To date, a broad spectrum of single crystalline nanomaterials with tailored properties have been synthesized, and have been successfully demonstrated as the building blocks of various high-performance device elements, such as transistors (6 -17), optical devices (18 -20), sensors (21)(22)(23)(24)(25)(26), energyscavenging devices (27), and simple circuit structures (7,17,19,28). These synthetic materials present a number of key advantages over their bulk counterparts.…”

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confidence: 99%

Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry

Fan

Jacobson

et al. 2008

Proc. Natl. Acad. Sci. U.S.A.

239

235

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We report large-scale integration of nanowires for heterogeneous, multifunctional circuitry that utilizes both the sensory and electronic functionalities of single crystalline nanomaterials. Highly ordered and parallel arrays of optically active CdSe nanowires and high-mobility Ge/Si nanowires are deterministically positioned on substrates, and configured as photodiodes and transistors, respectively. The nanowire sensors and electronic devices are then interfaced to enable an all-nanowire circuitry with on-chip integration, capable of detecting and amplifying an optical signal with high sensitivity and precision. Notably, the process is highly reproducible and scalable with a yield of Ϸ80% functional circuits, therefore, enabling the fabrication of large arrays (i.e., 13 ؋ 20) of nanowire photosensor circuitry with image-sensing functionality. The ability to interface nanowire sensors with integrated electronics on large scales and with high uniformity presents an important advance toward the integration of nanomaterials for sensor applications.nanomaterials ͉ printable electronics ͉ devices ͉ transistors ͉ imager C hemically derived, synthetic nanomaterials with low dimensionality and well defined atomic composition present a unique route toward miniaturization of electronic and sensor components while enhancing their performance and functionality (1-5). To date, a broad spectrum of single crystalline nanomaterials with tailored properties have been synthesized, and have been successfully demonstrated as the building blocks of various high-performance device elements, such as transistors (6 -17), optical devices (18 -20), sensors (21-26), energyscavenging devices (27), and simple circuit structures (7,17,19,28). These synthetic materials present a number of key advantages over their bulk counterparts. For instance, downscaling of the active sensing material to the nanoscale regime has been shown to enhance the sensitivity of chemical, biological, and optical sensors by orders of magnitude (21-26). To enable the implementation of nanosensors for various technological applications, on-chip integration with electronics is needed to enable automated and accurate processing of the signal. Here, we demonstrate an all-integrated, heterogeneous nanowire (NW) circuitry, capable of detecting and amplifying an optical signal with high sensitivity and responsivity. By implementing our recently developed contact printing technology (29, 30), large arrays of optically active CdSe NWs and high-mobility core/shell Ge/Si NWs are assembled at well defined locations on substrates, and configured as integrated sensor and electronic active components of an all-nanowire circuitry with image-sensing capability. Results and DiscussionIn this work, direct band gap CdSe NWs were used as a model system for the optical sensor elements, capable of detecting visible light with high sensitivity. CdSe-and CdS-based nanomaterials such as quantum dots and NWs have been extensively explored in the past, and their superb optical and opto-electric...

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Detection of NO₂ down to ppb Levels Using Individual and Multiple In₂O₃ Nanowire Devices

Cited by 852 publications

References 21 publications

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

High-Performance Transparent Conducting Oxide Nanowires

Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry

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