Detection of Long Wavelength Photons via Quasi-Two-Dimensional Ternary Ta<sub>2</sub>NiSe<sub>5</sub>

Ma, Wanli; Wu, Tuntan; Mao, Wangchen; Qiu, Qinxi; Li, Jingbo; Jiang, Lin; Yao, Niangjuan; Huang, Zhiming

doi:10.1021/acsaelm.2c00421

Cited by 7 publications

(3 citation statements)

References 39 publications

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“…(f) Comparison of the voltage responsivity of devices A-H. (g-h) Voltage noise spectra and NEP of device H at different gate voltages. (i) Comparison of the NEP under different frequencies with other detectors based on 2D materials, including graphene, [29,30,40,41] ZrGeSe, [36] PdSe 2 , [34] TaSe 2 , [32] PtTe 2 , [31] BP, [39,42,43] Ta 2 NiSe 5 , [44] and HgTe. [45] contrast, the response of device G is significantly stronger than that of the device A.…”

Section: Resultsmentioning

confidence: 99%

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Plasmonic Architectures Boosting Performance in Terahertz Photodetectors

Zhang,

Han,

et al. 2024

Laser & Photonics Reviews

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In terahertz (THz) photodetection, the efficient interaction between light and matter is crucial for enhancing material properties in nonequilibrium states. This work introduces an innovative approach using spiral plasmonic architectures to effectively control inversion‐symmetry coupling, promoting the operational efficiency of light‐induced hot‐carrier effects in the THz band. The strategic design of the spiral structures, focusing on chirality and symmetry, enables the successful manipulation of a self‐driven photocurrent, adapting its direction and magnitude as needed. This design facilitates the improvement of THz detectors in terms of sensitivity and responsiveness. Additionally, the integration of asymmetric metallization and black phosphorus in the detectors has achieved noteworthy performance metrics, such as a maximum responsivity of 70.2 V W−1 at 0.30 THz, a fast response time below 6 µs, and a noise‐equivalent power lower than 1.95 × 10−10 W Hz−1/2. Harnessing the potential of light‐induced hot carrier effects and advanced band‐structure engineering, this research offers a pragmatic approach for the development of high‐efficiency THz photodetectors, opening new avenues for applications like remote sensing and rapid imaging.

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Section: Resultsmentioning

confidence: 99%

“…(g‐h) Voltage noise spectra and NEP of device H at different gate voltages. (i) Comparison of the NEP under different frequencies with other detectors based on 2D materials, including graphene, [ 29,30,40,41 ] ZrGeSe, [ 36 ] PdSe 2 , [ 34 ] TaSe 2 , [ 32 ] PtTe 2 , [ 31 ] BP, [ 39,42,43 ] Ta 2 NiSe 5 , [ 44 ] and HgTe. [ 45 ]…”

Section: Resultsmentioning

confidence: 99%

Plasmonic Architectures Boosting Performance in Terahertz Photodetectors

Zhang,

Han,

et al. 2024

Laser & Photonics Reviews

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“…When the temperature exceeds 326 K, the monoclinic structure will become the orthogonal structure [29]. In addition, the direct narrow bandgap, wide IR absorption, unique in-plane anisotropy, highly efficient fluorescence quenching ability, and nonlinear optical properties make it has great application prospect in the fields of photodetectors [30][31][32][33][34][35], ultra-fast laser [36], and biomolecular nanosensor [37]. In this work, the monoclinic configuration of Ta 2 NiSe 5 crystal with semiconducting behavior is demonstrated.…”

Section: Introductionmentioning

confidence: 99%

High-performance flexible broadband photodetectors enabled by 2D Ta₂NiSe₅ nanosheets

Guo¹,

Sa²,

Wei³

et al. 2023

2D Mater.

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Flexible broadband optoelectronic devices play a prominent role in the areas of daily life including wearable optoelectronic systems, health care, and bio-imaging systems. Two-dimensional (2D) narrow-bandgap materials with atomic thickness, adjustable bandgap, mechanical flexibility, as well as excellent optical and electrical properties exhibit great potential for applications in flexible optoelectronic devices. Here, we demonstrate a high-performance photodetector based on high-quality ternary Ta2NiSe5 nanosheets with a narrow bandgap of 0.25 eV. The photodetectors exhibit broadband photodetection capability in the visible-infrared spectrum (405~2200 nm) at room temperature. The maximum values of responsivity can reach up to 280 A W-1 at the wavelength of 405 nm. Meanwhile, the high responsivity of 63.9 A W-1 and detectivity of 3.8 × 109 Jonesare achieved at the wavelength of 2200 nm, respectively. In addition, the obtained Ta2NiSe5-based photodetector shows excellent flexibility and the photodetection performance is almost insignificantly degraded after 1000 bending cycles. These results indicate that the 2D Ta2NiSe5 semiconductor has great potential in future wearable infrared optoelectronic devices.

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Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates

Hasan,

Khan,

Shahzadi

et al. 2024

Adv Funct Materials

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In recent years, silicon‐based room temperature Terahertz (THz) detectors have become the most optimistic research area because of their high speed, low cost, and unimpeded compatibility with mainstream complementary metal‐oxide‐semiconductor (CMOS) device technologies. However, Silicon (Si) suffers from low responsivity and high noise at THz frequencies. In this review, the recent advances in Si‐based THz detectors using silicon‐on‐insulator (SOI) substrates are presented. These offer several advantages over bulk counterparts, such as reduced parasitic capacitance, enhanced electric field confinement, and improved thermal isolation. The different types of THz detectors exploiting SOI substrate, such as conventional metal‐oxide‐semiconductor field effect transistors (MOSFETs), junction‐less MOSFETs, junction‐less nanowires field effect transistors (JLNWFETs), micro‐electromechanical system (MEMS), metal‐semiconductor‐metal (MSM) structures, and single electron transistor (SET), are discussed, and their key performances in terms of responsivity, noise equivalent power (NEP), bandwidth, and dynamic range are compared. The challenges and opportunities for further improvement of SOI THz detectors, such as device scaling, integration, and modulation, are also highlighted. This review may offer compelling evidence supporting the idea that SOI THz detectors have the potential to facilitate high performance, low power consumption, and scalability—qualities essential for advancing next‐level technologies.

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Detection of Long Wavelength Photons via Quasi-Two-Dimensional Ternary Ta₂NiSe₅

Cited by 7 publications

References 39 publications

Plasmonic Architectures Boosting Performance in Terahertz Photodetectors

Plasmonic Architectures Boosting Performance in Terahertz Photodetectors

High-performance flexible broadband photodetectors enabled by 2D Ta₂NiSe₅ nanosheets

Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates

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Detection of Long Wavelength Photons via Quasi-Two-Dimensional Ternary Ta2NiSe5

Cited by 7 publications

References 39 publications

Plasmonic Architectures Boosting Performance in Terahertz Photodetectors

Plasmonic Architectures Boosting Performance in Terahertz Photodetectors

High-performance flexible broadband photodetectors enabled by 2D Ta2NiSe5 nanosheets

Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates

Contact Info

Product

Resources

About

Detection of Long Wavelength Photons via Quasi-Two-Dimensional Ternary Ta₂NiSe₅

High-performance flexible broadband photodetectors enabled by 2D Ta₂NiSe₅ nanosheets