Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies

Gür, Emre; Zeng, Zhen; Krishnamoorthy, Sriram; Rajan, Siddharth; Ringel, S. A.

doi:10.1063/1.3631678

Cited by 18 publications

(11 citation statements)

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“…As this was carried out without defects included, we then evaluated the MIN cell efficiency while varying the total density of states from 1.0 × 10 13 cm −3 to 1.0 × 10 17 cm −3 . This latter density is even higher than the dominating defects concentration reported in [40][41][42][43]. metal work functions W f , lower than the optimal 6.30eV yield by the optimization process; and for the optimal x = 0.60 Indium composition alongside the x = 0.22 composition published in [13].…”

Section: Min Structure With Actual Experimental Ingan Composition Thmentioning

confidence: 69%

“…The defect energy is measured relatively to the conduction band edge. State PhotoCapacitance (SSPC) and the Lighted Capacitance-Voltage (LCV) techniques [40][41][42][43] as summarized in table 5.…”

Section: Min Structure With Actual Experimental Ingan Composition Thmentioning

confidence: 99%

“…To take it into account, we introduced, on the one hand, valence and conduction band Urbach tails in the simulation, with an energy of 0.125eV as experimentally obtained in [44], and, on the other hand, a Gaussian distribution of defects in the bandgap. We used defects that were experimentally studied in the literature using the well known Deep Level (Transient & Optical) Spectroscopy (DLTS and DLOS), the Steady- tally measured and reported in [40,41] for the x = 0.09 Indium composition, in [42] for x = 0.13 and in [43] for x = 0.20. The defect energy is measured relatively to the conduction band edge.…”

Section: Min Structure With Actual Experimental Ingan Composition Thi...mentioning

confidence: 99%

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Simulation study of a new InGaN p-layer free Schottky based solar cell

Adaine

Hamady

Fressengeas

2016

Superlattices and Microstructures

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On the road towards next generation high efficiency solar cells, the ternary Indium Gallium Nitride (InGaN) alloy is a good passenger since it allows to cover the whole solar spectrum through the change in its Indium composition. The choice of the main structure of the InGaN solar cell is however crucial. Obtaining a high efficiency requires to improve the light absorption and the photogenerated carriers collection that depend on the layers parameters, including the Indium composition, p-and n-doping, device geometry. . . Unfortunately, one of the main drawbacks of InGaN is linked to its p-type doping, which is very difficult to realize since it involves complex technological processes that are difficult to master and that highly impact the layer quality.In this paper, the InGaN p-n junction (PN) and p-i-n junction (PIN) based solar cells are numerically studied using the most realistic models, and optimized through mathematically rigorous multivariate optimization approaches. This analysis evidences optimal efficiencies of 17.8% and 19.0% for the PN and PIN structures. It also leads to propose, analyze and optimize p-layer free InGaN Schottky-Based Solar Cells (SBSC): the Schottky structure and a new MIN structure for which the optimal efficiencies are shown to be a little higher than for the conventional structures: respectively 18.2% and 19.8%.The tolerance that is allowed on each parameter for each of the proposed cells has been studied. The new MIN structure is shown to exhibit the widest tolerances on the layers thicknesses and dopings. In addition to its being p-layer free, this is another advantage of the MIN structure since it implies its better reliability. Therefore, these new InGaN SBSC are shown to be alternatives to the conventional structures that allow removing the p-type doping of InGaN while giving photovoltaic (PV) performances at least comparable to the standard multilayers PN or PIN structures.

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Section: Min Structure With Actual Experimental Ingan Composition Thmentioning

confidence: 69%

Section: Min Structure With Actual Experimental Ingan Composition Thmentioning

confidence: 99%

Section: Min Structure With Actual Experimental Ingan Composition Thi...mentioning

confidence: 99%

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Simulation study of a new InGaN p-layer free Schottky based solar cell

Adaine

Hamady

Fressengeas

2016

Superlattices and Microstructures

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“…The first stage is well known 2D growth mode which is seen in many different bulk materials such as GaN or ZnO [55,56]. The second stage is the 3D growth mode in which island like nucleation occurs and the vertical growth becomes favorable which is also seen in many different materials [57,58]. Anyone can see these stages in any sputtered TMDC materials, if the thickness of the materials is large enough.…”

Section: Growth Of 2d Tmdcs With Rfmsmentioning

confidence: 99%

Sputtered 2D transition metal dichalcogenides: from growth to device applications

Acar¹,

Gür²

2021

Turk J Phys

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Starting from graphene, 2D layered materials family has been recently set up more than 100 different materials with variety of different class of materials such as semiconductors, metals, semimetals, superconductors. Among these materials, 2D semiconductors have found especial importance in the state of the art device applications compared to that of the current conventional devices such as (which material based for example Si based) field effect transistors (FETs) and photodetectors during the last two decades. This high potential in solid state devices is mostly revealed by the transition metal dichalcogenides (TMDCs) semiconductor materials such as MoS 2 , WS 2 , MoSe 2 and WSe 2 . Therefore, many different methods and approaches have been developed to grow or obtain so far in order to make use them in solid state devices, which is a great challenge in large area applications. Although there are intensively studied methods such as chemical vapor deposition (CVD), mechanical exfoliation, atomic layer deposition, it is sputtering getting attention day by day due to the simplicity of the growth method together with its reliability, large area growth possibility and repeatability. In this review article, we provide benefits and disadvantages of all the growth methods when growing TMDC materials, then focusing on the sputtering TMDC growth strategies performed. In addition, TMDCs for the FETs and photodetector devices grown by RFMS have been surveyed.

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“…The P-and N-layers doping concentration has been fixed to average experimental values, 10 18 cm −3 [13,14]. To model the intrinsic electrical N-type behavior of InGaN, a low N-type doping of 5 × 10 15 cm −3 has been introduced in the absorber and the graded layers [15]. To model a realistic junction, diffusion of dopants has been taken into account using Gaussian profiles at the interfaces, as shown in Fig.…”

Section: Model Descriptionmentioning

confidence: 99%