Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells

THEORETICAL SIMULATION OF THE EFFECT OF TEMPERATURE OF MULTI-JUNCTION SOLAR CELLS (PIN/ InGaN)

“…The bandgaps of InN and GaN binaries as a function of temperature are expressed using Varshini's law [9,10]:…”

Modeling of polarization charge in N-face InGaN/GaN MQW solar cells

“…Moreover, the InGaN epitaxial layers suffer from both spontaneous and piezoelectric polarization fields [10,11]. Due to this limiting factor, the influence of polarization on the performance of solar cells based on the InGaN/GaN system has been extensively investigated and was the subject of many reports [12][13][14][15][16][17][18].…”

“…The induced electric field at the GaN/InGaN interface reinforces the photo-created carriers to drift in opposite direction of the efficient collection and substantially reduces both the short circuit current and the open circuit voltage [9,12]. To address those problems, several alternatives have been proposed as promising solutions, like the incorporation of a linearly graded junction between GaN and InGaN or the use of homojunction structures [9][10][11][12][13][14][15][16].…”

Improvement of strained InGaN solar cell performance with a heavily doped n+‐GaN substrate

“…InGaN film on n‐GaN is likely to be strained, and a band offset between two layers will also be generated, which results in the degradation of solar cell performance . To avoid the strain and band‐offset effect, the use of a p‐InGaN layer or an In compositional graded p‐layer at the p/i interface has been theoretically proposed. The insertion of n‐InGaN between the i‐InGaN and n‐GaN layers is theoretically suggested to minimize the polarization and band offset effects .…”