THEORETICAL SIMULATION OF THE EFFECT OF TEMPERATURE OF MULTI-JUNCTION SOLAR CELLS (PIN/ InGaN)

Abstract

In this study, we performed a numerical theoretical simulation of single-junction and dualjunction solar cells based on InGaN. This simulation calculates the electrical parameters, characteristics of each of the studied cells, such as absorption, open-circuit voltage (Vco), collection efficiency, short circuit density (Jsc), and form factor FF. We have optimized the cells top PIN (In0.62Ga0.38N) and bottom PIN (In0.81Ga0.19N), and a dual-junction cell. The conversation efficiency of the single junction PIN cells exceeds 23%, while it is 38% for the dual-junction cell. The temperature dependencies of single junction and dual-junction solar cells have been studied at temperatures ranging from 300˚K to 450˚K. The variation of the electrical parameters of each cell was simulated with increasing temperature and the simulation result was detailed in this study. This study was done under standard conditions (AM1.5, 1000mW/cm2 ) and the simulation was performed on an ANOC calculation code (the latter is available as an application on android devices).