Modeling of polarization charge in N-face InGaN/GaN MQW solar cells

Belghouthi, Rabeb; Taamalli, S.; Echouchene, Fraj; Mejri, H.; Belmabrouk, Hafedh

doi:10.1016/j.mssp.2015.07.009

Cited by 36 publications

(19 citation statements)

References 18 publications

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“…The enhancement in efficiency was also demonstrated in the ZnO thin film‐based PV systems . Besides, thanks to the adjustable energy band, In x Ga 1− x N is an appealing material for PV technology, and an improved efficiency of In x Ga 1− x N quantum well solar cell by an applied strain has indeed been observed …”

Section: Theory Of Piezo‐phototronicsmentioning

confidence: 81%

Recent Progress in Piezo‐Phototronic Effect Enhanced Solar Cells

Zhu

Wang

2018

Adv Funct Materials

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For third generation semiconductors, for example, wurtzite ZnO and GaN, a piezopotential will be induced in these non-centrosymmetric structures through applying a stationery deformation. The synchronous occupancy of semiconductor engineering, piezoelectric property, and optical excitation processes in these materials brings about outstanding device performances, such as promoting carrier creation, transfer, separation, or suppressing carrier recombination. Enormous research interests have been sparked in this emerging field known as the piezo-phototronic effect. This manuscript reviews the fundamental research progress in enhanced photovoltaic efficiency by this effect, which not only provides a comprehensive coverage of the theoretical and experimental works illustrating the basic physics for understanding the enhanced solar cells when an external mechanical strain is applied, but also gives new insight into designing high-performance solar cells.

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Section: Theory Of Piezo‐phototronicsmentioning

confidence: 81%

Recent Progress in Piezo‐Phototronic Effect Enhanced Solar Cells

Zhu

Wang

2018

Adv Funct Materials

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“…The absorption coefficient α ( λ ) is expressed according to Ref. :

α (λ) = 1 \times 10^{5} \sqrt{C (x) (E - E_{g}) + D (x) {(E - E_{g})}^{2}}

Where C ( x ) and D ( x ) are composition dependent parameters given by:

C (x) = 12.87 x^{4} - 37.79 x^{3} + 40.43 x^{2} - 18.35 x + 3.52

D (x) = - 2.92 x^{2} + 4.05 x - 0.66

…”

Section: Photodiode Structure and Numerical Simulationmentioning

confidence: 99%

Design and Simulation of InGaN/GaN p–i–n Photodiodes

Elbar

Alshehri

Tobbeche

et al. 2018

Physica Status Solidi (a)

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InGaN ternary alloys with their band gaps varying from 0.7 to 3.4 eV, are very promising for photodetector devices operating from UV to IR wavelength range. Using Silvaco–Atlas software, an In0.1Ga0.9N/GaN based p–i–n photodiode is designed and the J–V characteristics, the spectral responsivity, the frequency response and the cut‐off frequency as a function of InGaN thickness are studied. The photodiode exhibits a high reverse breakdown voltage of 38 V, a peak responsivity of 0.2 A W−1 at 0.343 μm wavelength and a cutoff frequency of 400 MHz under an applied reverse bias voltage of 2 V and for a 0.1 μm i‐InGaN layer, in good agreement with simulated and experimental results found in literature. It is found that an optimum i‐layer thickness of 1.5 μm for the maximum cutoff frequency of 4 GHz attributed to the predominance of the limitation in capacitance effect on the cutoff frequency at low i‐layer thickness and the transit time on the cuttoff frequency for high i‐layer thickness. For this i‐layer thickness, the highest peak responsivity about 0.244 A W−1 at 0.384 μm wavelength is achieved.

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“…It should be noted that the induced-polarization at the InGaN/GaN hetero-interface depends on the indium content in the InGaN epilayer and can be calculated using an ab initio model developed by Fiorentini et al [11,16]. Definitely, due to charge spreading at the vicinity of the interface, the polarization charges are distributed in a few atomic layers as thick as 1 nm [11,12], called W pz . Hereafter; we assume that the polarization charges can be described by a bulk charge density q pz such as:…”

Section: Pv Cell Electrical Modelmentioning

confidence: 99%

“…Such a form of I s will be used as a basic equation in building our numerical model under Matlab/Simulink following Zhang et al [17,18] and Belghouthi et al [11,12]:…”

Section: Pv Cell Electrical Modelmentioning

confidence: 99%

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A novel widespread Matlab/Simulink based modeling of InGaN double hetero-junction p-i-n solar cell

Selmi

Belghouthi

2017

Int J Energy Environ Eng

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This paper presents a model of a photovoltaic (PV) cell based on InGaN instead of regular cells made up of silicon, while polarization effects are considered. The model is constructed under Matlab/Simulink environment upon the equivalent electrical circuit of the PV cell. The way components of the equivalent electrical circuit are connected leads to establishing mathematical equations, thus, describing the behavior of the PV cell under different environmental and physical conditions. Once the PV cell model is validated by means of experimental results, it has been extended to build a model of a PV module made up of numerous cells interconnected in diverse potential configurations depending on the expected outputs in terms of current/voltage. The model has shown promising and accurate results and would aid researchers in the field of power electronics to consider it as a truthful PV generator (PVG).

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Modeling of polarization charge in N-face InGaN/GaN MQW solar cells

Cited by 36 publications

References 18 publications

Recent Progress in Piezo‐Phototronic Effect Enhanced Solar Cells

Recent Progress in Piezo‐Phototronic Effect Enhanced Solar Cells

Design and Simulation of InGaN/GaN p–i–n Photodiodes

A novel widespread Matlab/Simulink based modeling of InGaN double hetero-junction p-i-n solar cell

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