Detailed Analysis on the Spectral Response of InP/InGaAs HPTs for Optoelectronic Applications

Khan, Hassan Abbas; Rezazadeh, A.A.; Sohaib, Sarmad; Tauqeer, Tauseef

doi:10.1109/jqe.2012.2187176

Cited by 11 publications

(4 citation statements)

References 21 publications

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“…What is more, under 0-0.3 V bias, the total current increases monotonously as the thickness of intrinsic layer increases. The notch in emitter is an obstacle for holes injection from emitter to base, and the knee voltage of the HPT is proportional to the depth of the valence band notch in emitter [19]. Figure 7 shows the photoresponse and S/N as functions of graded composition of the base.…”

Section: Resultsmentioning

confidence: 99%

Performance optimization of Pnp InGaAs/InP heterojunction phototransistors

Chen

Zhu

2016

Appl. Phys. A

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Fabrication, physical simulation, and optimization of two-terminal Pnp heterojunction phototransistors (2T-HPTs) based on In 0.53 Ga 0.47 As/InP are reported. The parameters of fundamental models are determined by comparing the simulated current and response characteristics with the experimental results. To optimize the optical gain and device performance, the precise adjustment of the base doping level, base width, and compositional grading of base has been investigated. Properly reducing the base width or increasing the range of the compositional grading can greatly enhance the emitter injection efficiency. The effects of high-low doping in collector region and the insertion of a thin, undoped InGaAs layer in the base region of the HPT have also been investigated in detail. It is found the high-low doping in collector can form an electric field to aid carrier transport, and the intrinsic layer between emitter and base has functions of reducing knee voltage and the dark current of HPT.

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Section: Resultsmentioning

confidence: 99%

Performance optimization of Pnp InGaAs/InP heterojunction phototransistors

Chen

Zhu

2016

Appl. Phys. A

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“…[12][13][14] Khan et al optimized the necessary analytical expressions of the spectral response model using the doping-dependent collection efficency with the incident light radiated at the base region directly. [15] However, according to the theory of Chand, [11] the diffusion current coming from the neutral portion sub-collector should be taken into consideration in calculating the depleted-collector current, which was neglected by Khan owing to the relatively small diffusion coefficients of the minority-carrier holes in the n-type sub-collecter. Furthermore, there are many integrated devices currently employing HPTs with a floating base such as HPTs/OLEDs optical upconverter [16,17] and HPTs/LDs, [18,19] which require the light radiated from the emitter of the HPTs.…”

Section: Introductionmentioning

confidence: 99%

“…The epitaxial layer structure of this device consists of a p-type InP layer as emitter, a thin n-type In 0.53 Ga 0.47 As layer as base, and a p-type In 0.53 Ga 0.47 As layer as collector. Unlike the structure of Khan et al, [15,20,21] the emitter/base junction and the collector/sub-collector junction in our model are neither exposed to the air nor contacted to the metal. So not only the photo-generated minority carriers but also the thermal equilibrium minority carriers electrons (holes) in these regions should be taken into account in the boundary conditions of the spectral response model.…”

Section: Introductionmentioning

confidence: 99%

Spectral response modeling and analysis of p–n–p In _0.53 Ga _0.47 As/InP HPTs

Lv¹

2016

Chinese Phys. B

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We report our results on the modeling of the spectral response of the near-infrared (NIR) lattice-matched p-n-p In 0.53 Ga 0.47 As/InP heterojunction phototransistors (HPTs). The spectral response model is developed from the solution of the steady state continuity equations that dominate the excess optically generated minority-carriers in the active regions of the HPTs with accurate boundary conditions. In addition, a detailed optical-power absorption profile is constructed for the device modeling. The calculated responsivity is in good agreement with the measured one for the incident radiation at 980 nm, 1310 nm, and 1550 nm. Furthermore, the variation in the responsivity of the device with the base region width is analyzed.

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“…The optic generated holes dismissed/drifted slowly from collector to emitter, which restricted the device high frequency performance and thus the photoelectric response speed. [4][5][6][7] The uni-traveling-carrier (UTC) idea was first proposed and applied to a photo-detector (PD) to make only one carrier (the electron) across the base and collector junction area. [8][9][10][11][12] UTC-PD had a faster response speed, higher saturation current, and wider linear dynamic range than the traditional PD detector.…”

Section: Introductionmentioning

confidence: 99%

Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor

Jiang¹,

Xie²,

Zhang³

et al. 2015

Chinese Phys. B

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In this paper, the positive influence of a uni-traveling-carrier (UTC) structure to ease the contract between the responsivity and working speed of the InP-based double hetero-junction phototransistor (DHPT) is illustrated in detail. Different results under electrical bias, optical bias or combined electrical and optical bias are analyzed for an excellent UTC-DHPT performance. The results show that when the UTC-DHPT operates at three-terminal (3T) working mode with combined electrical bias and optical bias in base, it keeps a high optical responsivity of 34.72 A/W and the highest optical transition frequency of 120 GHz. The current gain of the 3T UTC-DHPT under 1.55-μm light illuminations reaches 62 dB. This indicates that the combined base electrical bias and optical bias of 3T UTC-DHPT can make sure that the UTC-DHPT provides high optical current gain and high optical transition frequency simultaneously.

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Detailed Analysis on the Spectral Response of InP/InGaAs HPTs for Optoelectronic Applications

Cited by 11 publications

References 21 publications

Performance optimization of Pnp InGaAs/InP heterojunction phototransistors

Performance optimization of Pnp InGaAs/InP heterojunction phototransistors

Spectral response modeling and analysis of p–n–p In _0.53 Ga _0.47 As/InP HPTs

Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor

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Detailed Analysis on the Spectral Response of InP/InGaAs HPTs for Optoelectronic Applications

Cited by 11 publications

References 21 publications

Performance optimization of Pnp InGaAs/InP heterojunction phototransistors

Performance optimization of Pnp InGaAs/InP heterojunction phototransistors

Spectral response modeling and analysis of p–n–p In 0.53 Ga 0.47 As/InP HPTs

Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor

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Spectral response modeling and analysis of p–n–p In _0.53 Ga _0.47 As/InP HPTs