Abstract:Fabrication, physical simulation, and optimization of two-terminal Pnp heterojunction phototransistors (2T-HPTs) based on In 0.53 Ga 0.47 As/InP are reported. The parameters of fundamental models are determined by comparing the simulated current and response characteristics with the experimental results. To optimize the optical gain and device performance, the precise adjustment of the base doping level, base width, and compositional grading of base has been investigated. Properly reducing the base width or in… Show more
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