Abstract:We report our results on the modeling of the spectral response of the near-infrared (NIR) lattice-matched p-n-p In 0.53 Ga 0.47 As/InP heterojunction phototransistors (HPTs). The spectral response model is developed from the solution of the steady state continuity equations that dominate the excess optically generated minority-carriers in the active regions of the HPTs with accurate boundary conditions. In addition, a detailed optical-power absorption profile is constructed for the device modeling. The calcula… Show more
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