Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor

Jiang, Zhi‐Yun; Xie, Hongyun; Zhang, Lianghao; Zhang, Wanrong; Rui-Xin, Hu; Wen-Juan, Huo

doi:10.1088/1674-1056/24/4/048504

Cited by 3 publications

(1 citation statement)

References 15 publications

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“…As the built-in voltage of space charge region V bi is about 1.1 V, which is close to the applied voltage V BE of 1 V in normal operation, only the diffusion capacitance C DE needs considering. The C DE can be expressed as [16] C DE = A j,BE q 2 KT p n0 L p + n p0 L n e q(V BE,opt +V BE )/KT , (…”

Section: Base-emitter Capacitancementioning

confidence: 99%

Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor*

Liu¹,

Ma²,

Xie³

et al. 2020

Chinese Phys. B

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The effects of buried oxide (BOX) layer on the capacitance of SiGe heterojunction photo-transistor (HPT), including the collector–substrate capacitance, the base–collector capacitance, and the base–emitter capacitance, are studied by using a silicon-on-insulator (SOI) substrate as compared with the devices on native Si substrates. By introducing the BOX layer into Si-based SiGe HPT, the maximum photo-characteristic frequency f t,opt of SOI-based SiGe HPT reaches up to 24.51 GHz, which is 1.5 times higher than the value obtained from Si-based SiGe HPT. In addition, the maximum optical cut-off frequency f β,opt, namely its 3-dB bandwidth, reaches up to 1.13 GHz, improved by 1.18 times. However, with the increase of optical power or collector current, this improvement on the frequency characteristic from BOX layer becomes less dominant as confirmed by reducing the 3-dB bandwidth of SOI-based SiGe HPT which approaches to the 3-dB bandwidth of Si-based SiGe HPT at higher injection conditions.

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Section: Base-emitter Capacitancementioning

confidence: 99%

Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor*

Liu¹,

Ma²,

Xie³

et al. 2020

Chinese Phys. B

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Effect of uni-traveling-carrier on saturation current, optical responsivity and response speed of phototransistor

Liu

Xie

Zhang

et al. 2016

2016 5th International Symposium on Next-Generation Electronics (ISNE)

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Analytic models for solid state plasma of Si/Ge/Si heterogeneous and lateral SPiN diode

Hai-Yan¹,

Hu²,

Wang³

et al. 2015

Acta Phys. Sin.

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Silicon-based reconfigurable antenna, which is fabricated by heterogeneous and lateral surface PiN (SPiN), is an effective technology to achieve antenna miniaturization and enhance radar and wireless communication system performance. In this paper, the heterogeneous and lateral Si/Ge/Si SPiN diode is presented, that can weaken the band gap narrowing of the P + and N + region to improve the injection ratio of PN junction. And the electrical properties of the solid state plasma within the intrinsic region are also studied. Based on the bipolar diffusion model and Fletcher boundary condition, the analytic models of the junction voltage, the current density and the solid state plasma concentration distribution are established for a large injection current, and the numerical simulation has been carried out. Results show that the junction voltage increases linearly with the increase of applied voltage and the solid state plasma concentration at the boundary; and the current density increases exponentially with increasing junction voltage and the applied voltage, respectively. And the applied voltage and the current density of heterogeneous SPiN diode is lower than that of homogeneous SPiN diode under the same condition due to the difference of barrier heights between the heterojunction and homojunction. In addition, results also show that the value of the concentration decreases with increasing length of the intrinsic region; otherwise, it increases with increasing applied voltage and the doping concentration in the P+ and N+ regions. Under the same conditions, the solid state plasma concentration of the heterogeneous SPiN diode is nearly seven times that of homogeneous diode, which is in excellent agreement with the data published, giving the evidence for the validity of our method. The proposed models provide an effective reference for the design and application of silicon-based reconfigurable antennas.

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Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor

Cited by 3 publications

References 15 publications

Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor*

Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor*

Effect of uni-traveling-carrier on saturation current, optical responsivity and response speed of phototransistor

Analytic models for solid state plasma of Si/Ge/Si heterogeneous and lateral SPiN diode

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