Design of power integrated circuits in full AlGaN/GaN MIS‐HEMT configuration for power conversion

Sun, Ruize; Liang, Yung C.; Yeo, Yee-Chia; Wang, Yun-Hsiang; Zhao, Cezhou

doi:10.1002/pssa.201600562

Cited by 16 publications

(10 citation statements)

References 20 publications

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“…As the representative of the wide bandgap semiconductor devices, the gallium nitride high-electron-mobility transistor (GaN HEMT) has excellent electrical performance, hightemperature resistance, high power, and resistance to extreme radiation environments, which could meet the needs of new-generation spacecraft energy systems [1][2][3][4]. When a nuclear-powered spacecraft works in space, in addition to radiation damage caused by energetic particles, the comprehensive radiation environment with neutrons and gamma rays could also lead to performance degradation or even device failure of electronic systems by displacement damage effects (DDD) and total dose effects (TID) [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

et al. 2022

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This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and 60Co gamma-ray irradiation. The results show that when the accumulated gamma-ray doses are up to 800k rad(Si), the leakage-current degradations of the two types of GaN HEMTs with 14 MeV neutron irradiation of 1.3 × 1012 n/cm2 and 3 × 1012 n/cm2 exhibit a lower degradation than the sum of the two separated effects. However, the threshold voltage shifts of the cascode structure GaN HEMT show a higher degradation when exposed to both TID and DDD effects. Moreover, the failure mechanisms of the synergistic effect in GaN HEMT are investigated using the scanning electron microscopy technique. It is shown that for the p-GaNHEMT, the increase in channel resistance and the degradation of two-dimensional electron gas mobility caused by neutron irradiation suppresses the increase in the TID leakage current. For the cascode structure HEMT, the neutron radiation-generated defects in the oxide layer of the metal–oxide–semiconductor field-effect transistor might capture holes induced by gamma-ray irradiation, resulting in a further increase in the number of trapped charges in the oxide layer.

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Section: Introductionmentioning

confidence: 99%

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

et al. 2022

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“…[1][2][3] GaN outperforms conventional silicon in terms of exceptionally high electron mobility, high break down electric field intensity, high thermal conductivity and wide band gap range, making them attractive for widespread applications ranging from the advanced high frequency power devices to components used in aerospace and military scenarios. [4][5][6][7][8][9] GaN crystals can be grown on kinds of substrates, including sapphire, silicon carbide (SiC) and silicon (Si). Growing GaN defects but also possible defects in inner dielectric layer and buffer layer.…”

Section: Introductionmentioning

confidence: 99%

Exploration of Physicochemical Mechanism for Negative Bias Temperature Instability in GaN‐HEMTs by Extracting Activation Energy of Dislocations

Chang

Wang

Zhou

et al. 2022

Adv Materials Inter

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epitaxial layers on silicon enables the use of existing silicon manufacturing infrastructure, eliminating the need for costly specific production facilities and leveraging large diameter silicon wafers at low cost. [10,11] Although silicon is a relatively cheap substrate compared with other substrate candidates, but has some distinct disadvantages since silicon and GaN are unmatched material systems. [12] The discrepancies in crystalline structure of GaN and silicon leads to higher lattice mismatches, behaving like dislocations and other types of defects. [13][14][15][16] The crystal defects affect the device performance and reliability to a large extent. A typical conundrum in GaN filed is related to the fact that the dislocations/lattice mismatch could exert inevitable negative effects on the device's basic performance, stability, and reliability. [17][18][19][20] Intensive researches indicated that charge trapping process caused by defects significantly affect the device performance. [21][22][23][24][25][26][27] As the most promising power device, gallium nitride (GaN)-based high electron mobility transistors (HEMTs) typically works under high voltage over a prolonged period. The long-term accumulation of heat during the operation appears to be another unfavorable factor that deteriorates the reliability. [28][29][30][31] The general degradation of electrical performance under negative bias condition at elevated temperatures is collectively known as negative bias temperature instability (NBTI) problem. [32] Although the NBTI problem was first noticed and mainly discussed in p-MOSFET devices, [33][34][35][36] it also perplexes depletion-mode or normally-ON GaN-HEMTs which is the most frequently used GaN device. [37][38][39][40][41][42][43][44] NBTI-related issues in depletion-mode GaN-HEMTs with different kinds of dielectric layer have been investigated in a series of researches. [41,[45][46][47][48][49][50] The NBTI-induced reliability issues in GaN-HEMTs have been acknowledged as a major concern that contributes to the operational instability. While intensive efforts have been made to optimize it from the perspective of manufacturing process or selected materials, [45,51,52] insufficient attention has been devoted to fundamental understanding of the intrinsic mechanisms. Some studies [41][42][43][44][45][46] attributed the degradation to the charge and discharge process of defects at the interface of GaN buffer layer and dielectric layer, while others [47][48][49][50] considered the degradation cause is not only the interface

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“…However, due to the relative low length of drift region in highly scaled GaN HEMTs in MMIC platforms, the state-of-the-art breakdown voltage is mostly below 150 V. Also the threshold voltage of HEMTs is negative, which is not fault-safe and requires specially designed gate driver. These conditions restrain GaN MMIC processes from realizing high voltage and high power DC-DC converters [25].…”

Section: Introductionmentioning

confidence: 99%

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

et al. 2020

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High frequency and high efficiency operation is one of the premier interests in the signal and energy conversion applications. The wide bandgap GaN based devices possess superior properties and have demonstrated exceeding performance than Si or GaAs devices. In order to further exploit the potential of GaN electronics, monolithic power integration is proposed. Firstly, this paper discusses the structure and properties of GaN power devices to explain the choice of lateral integration in the view of GaN power ICs. Then the state-of-the-art performance of GaN power integration in two major application areas is reviewed, which are the microwave power amplification and DC-DC power conversion. The GaN power integration technologies in MMIC platforms are summarized in terms of the gate length, operation frequency and power added efficiency of ICs. On the other hand, the smart GaN power IC platforms have boosted the development of DC-DC power converters. Demonstrations of high frequency (>1 MHz) and high efficiency (>95 %) converters with various kinds of integration technology and topology are reviewed. Lastly novel integration schemes and methods are introduced to stimulate new thoughts on GaN power integration road.

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Design of power integrated circuits in full AlGaN/GaN MIS‐HEMT configuration for power conversion

Cited by 16 publications

References 20 publications

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Exploration of Physicochemical Mechanism for Negative Bias Temperature Instability in GaN‐HEMTs by Extracting Activation Energy of Dislocations

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

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