High frequency and high efficiency operation is one of the premier interests in the signal and energy conversion applications. The wide bandgap GaN based devices possess superior properties and have demonstrated exceeding performance than Si or GaAs devices. In order to further exploit the potential of GaN electronics, monolithic power integration is proposed. Firstly, this paper discusses the structure and properties of GaN power devices to explain the choice of lateral integration in the view of GaN power ICs. Then the state-of-the-art performance of GaN power integration in two major application areas is reviewed, which are the microwave power amplification and DC-DC power conversion. The GaN power integration technologies in MMIC platforms are summarized in terms of the gate length, operation frequency and power added efficiency of ICs. On the other hand, the smart GaN power IC platforms have boosted the development of DC-DC power converters. Demonstrations of high frequency (>1 MHz) and high efficiency (>95 %) converters with various kinds of integration technology and topology are reviewed. Lastly novel integration schemes and methods are introduced to stimulate new thoughts on GaN power integration road.
In this paper, we designed a low turn-on voltage (V
On) AlGaN/GaN lateral field-effect rectifier (LFER) compatible with p-GaN gate high-electron-mobility transistor (HEMT) technology (PG-LFER). We also established an analytical model on the gated control two-dimensional-electron-gas density (n
S) distributions and V
On to investigate the underlying mechanism. The designed PG-LFER features a p-GaN charge storage layer (CSL) under the anode terminal. Net negative charge density in the p-GaN CSL (σ
p-GaN) is associated with the activated doping concentration of p-GaN CSL (N
p-GaN) and p-GaN CSL thickness (t
p-GaN). V
On of the PG-LFER is significantly lowered due to the low σ
p-GaN caused by reducing the N
p-GaN and t
p-GaN. Meanwhile, the low V
On PG-LFER also preserves recognizable reverse blocking and capacitance characteristics. Verified by the calibrated simulation, the designed PG-LFER shows 70% lower V
On compared with the non-optimized LFER with a high σ
p-GaN. Compatible with p-GaN gate HEMT technology, the designed PG-LFER with improved performance is a promising candidate for power integrated applications.
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