Design Consideration of Bulk FinFETs with Locally-Separated-Channel Structures for Sub-50 nm DRAM Cell Transistors

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Design Consideration of Bulk FinFETs with Locally-Separated-Channel Structures for Sub-50 nm DRAM Cell Transistors

Abstract: Abstract-We

Cited by 8 publications

References 15 publications

Effects of channel doping concentration and fin dimension variation on self-boosting of channel potential in NAND-type SONOS flash memory array based on bulk-FinFETs

Effects of channel doping concentration and fin dimension variation on self-boosting of channel potential in NAND-type SONOS flash memory array based on bulk-FinFETs

Design of SOI FinFET on 32nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL)

Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices

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