Depth analysis of nickel thin films on silicon by glow discharge spectroscopy: The interface region

Abstract

Depth profiles of nickel thin films on silicon obtained with a Grimm glow discharge lamp operating at various conditions were compared. The best conditions for the profile analysis are: high argon pressure, high discharge current and low discharge voltage. The signal response at the interface was described quantitatively using piecewise linear madel functions. Influence of the discharge parameters on the signal response at the interface was discussed. Interface broadening was confirmed to he caused by the crater eflect, with a aon-uniform removal rate distribution across the analysed spot that does not depend on the total sputtered depth in the analysis of a homogeneous sample.

Comparative depth-profiling analysis of nanometer-metal multilayers by ion-probing techniques

“…In the following paragraphs, we briefly describe the principles of the profiling techniques under consideration. with a depth resolution in the nm range [17][18][19][20] and a high level of detection (1 ppm) and quantification (10 ppm). Besides, the use of a radiofrequency (rf) source for sputtering extends the application of GDOES to the study of insulators as both coatings and substrates [21,22].…”

Thickness determination from the GDOS depth profiles using piece-wise linear model functions

“…As it was described in [7], GDOS depth profiles of a thin film on a substrate with a sharp interface have two important features:…”

Modelling of Glow Discharge Optical Emission Spectroscopy depth profiles of metal (Cr,Ti) multilayer coatings

“…sharpness and coherence of the interfaces, since very often they determine the final properties of the coatings. For this purpose, Glow Discharge Optical Emission Spectroscopy (GDOES) has revealed as valuable tool for rapid elemental analysis in comparison to other classical surface analytical techniques (Auger, X-Ray Photoelectron or Secondary Ion Mass Spectroscopies (AES, XPS and SIMS, respectively) or even Rutherford Backscattering Spectroscopy (RBS) since it may provide in-depth resolution down to a few nanometres [11][12][13][14][15][16][17][18][19]. The ability of GDOES to give a depth profile of layers several microns thick in few minutes time makes it possible to be used in process development.…”