Deposition of earth-abundant p-type CuBr films with high hole conductivity and realization of p-CuBr/n-Si heterojunction solar cell

Abstract

We present details of the deposition of transparent and earth-abundant p-type CuBr films with high hole conductivity and the fabrication and characterization of a prototype solar cell based on p-CuBr/n-Si

Self‐Confined Growth of Ultrathin 2D Nonlayered Wide‐Bandgap Semiconductor CuBr Flakes

“…Therefore, it is important to develop a low‐cost and high‐performance wide‐bandgap material without the lattice mismatch. The earth‐abundant γ‐CuBr with zinc blende structure is naturally a p‐type semiconductor with a wide direct bandgap of ≈3.0 eV, which can be synthesized at a low temperature environment . In addition, the large excitonic binding energy of 108 meV of CuBr, much higher than that of GaN (≈23 meV) and ZnO (≈60 meV), indicates a strong room‐temperature exciton emission and great potential in constructing short wavelength luminescence devices .…”

Effect of the Properties of Chalcopyrite Semiconductors on the Physical and Optical Parameters of Cell Layers with CIGS

“…Other interesting works on GICS devices may be found in the literature (Sobayel et al [20], Li et al [21], Farooq et al [22], Sharbati et al [23], Bouchama et al [24], Saifullah et al [25], Mallem et al [26], Ding et al [27], Procel et al [28], Richter et al [29], Tao et al [30], Ok et al [31], Rajani et al [32], Singh et al [33], and Jay et al [34]). They also presented in Table 1.…”

“…This configuration is used for a CIGS solar cell. [20] CIGS cell with LDS layer on top [21] CIGS Cell with vs. effective layers [22] AlxGa1-xAs/CIGS tandem cell [23] Superstrate CIGS cell [24] Completed CIGS cell [25] TMO/Si heterojunction solar cell [26] n-type Si PERT bifacial cell [27] p-type c-Si solar cell [28] n-type silicon solar cell [29] TOP-Con silicon solar cell [30] N-type front junction Si solar cell [31] p-CuBr/n-Si heterojunction cell [32] n-type mc-Si screen-printed cell [33] n-type a-Si:H/c-Si heterojunctions [34]…”

Improvement of Short‐Circuit Current Density in p‐Ni1−xO:Li/n‐Si Heterojunction Solar Cells by Wet Chemical Etching

“…However, the cell still exhibits a high process cost and technical barriers because of its complex structure, despite the fact that it can be fabricated at a rather low temperature (<250 ∘ C) [1,2]. By comparison, the low cost transparent conducting oxide (TCO)/n-Si heterojunction solar cells (HJSCs) are more promising as high-conversion-efficiency and low cost SCs because of the advantages they offer, including a simpler device structure and a lower processing temperature (<250 ∘ C) [3][4][5][6][7][8][9][10][11][12][13]. In 2013, our study [14] proposed that low cost p-type Ni 1− O:Li thin film was a promising material candidate for other TCO materials (such as n-ZnO-base or n-type indium tin oxide (n-ITO)) in HJSCs applications due to the higher work function (>5 eV), which can directly increase the built-in potential ( bi ) and further increase the oc .…”