Effect of the Properties of Chalcopyrite Semiconductors on the Physical and Optical Parameters of Cell Layers with CIGS

Abstract

In this paper, the impact of various buffers of applying components on the effectiveness of CuInGaSe2 solar cells is studied numerically. The SCAPS software is employed to achieve the investigation. The main parameters of the inspected devices are: the photovoltaic conversion effectiveness (η), the filling factor (FF), short-circuit current (Jsc), and open circuit voltage (Voc). These photovoltaic parameters are analyzed vs. the thickness in the various buffer layers under study. The numerical findings revealed that the most significant conversion effectiveness (23.4%) of the CIGS solar cell is obtained with the CdS buffer layer. An attempt is conducted to improve this efficiency by using the SCAPS and by optimizing the two electrical and technological parameters of the three layers (ZnO, CdS, CIGS).