2019
DOI: 10.1002/adma.201903580
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Self‐Confined Growth of Ultrathin 2D Nonlayered Wide‐Bandgap Semiconductor CuBr Flakes

Abstract: 2D planar structures of nonlayered wide‐bandgap semiconductors enable distinguished electronic properties, desirable short wavelength emission, and facile construction of 2D heterojunction without lattice match. However, the growth of ultrathin 2D nonlayered materials is limited by their strong covalent bonded nature. Herein, the synthesis of ultrathin 2D nonlayered CuBr nanosheets with a thickness of about 0.91 nm and an edge size of 45 µm via a controllable self‐confined chemical vapor deposition method is d… Show more

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Cited by 65 publications
(46 citation statements)
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“…[ 34 ] On account of its high crystalline quality and low defects, the fluorescent lifetime of the InI flake is utilized and fitted as 0.34 ns (Figure 3c), marginally more protracted than previously reported high‐quality 2D materials. [ 35–38 ] Furthermore, temperature‐dependent PL measurement is also carried out to get more information about the carrier’s trap states in the 80–300 K temperature range using an excitation wavelength of 532 nm; as expected, the PL intensity decreases drastically as the temperature increases from 80 to 300 K, indicating a thermal quenching effect as shown in pseudocolor map (Figure 3d) and Figure 3e shows the temperature‐dependent PL intensity curve. Figure 3f illustrates that the exciton emission peak blue‐shifted from 2.008 to 1.988 eV due to the lattice expansion as the temperature increases.…”
Section: Resultsmentioning
confidence: 69%
“…[ 34 ] On account of its high crystalline quality and low defects, the fluorescent lifetime of the InI flake is utilized and fitted as 0.34 ns (Figure 3c), marginally more protracted than previously reported high‐quality 2D materials. [ 35–38 ] Furthermore, temperature‐dependent PL measurement is also carried out to get more information about the carrier’s trap states in the 80–300 K temperature range using an excitation wavelength of 532 nm; as expected, the PL intensity decreases drastically as the temperature increases from 80 to 300 K, indicating a thermal quenching effect as shown in pseudocolor map (Figure 3d) and Figure 3e shows the temperature‐dependent PL intensity curve. Figure 3f illustrates that the exciton emission peak blue‐shifted from 2.008 to 1.988 eV due to the lattice expansion as the temperature increases.…”
Section: Resultsmentioning
confidence: 69%
“…SHG refers to an NLO effect that two photons with the same frequency encounter with nonlinear materials producing one double frequency photon (Fig. 3a) [33]. The experimental setup of SHG measurement is shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Copyright 2012, Wiley‐VCH. b) Morphologies and device performance of UV detectors based on large‐size wide‐bandgap 2D crystals (top: NiPS 3 ,144 bottom: CuBr145). Reproduced with permission 144.…”
Section: Heterojunction Integration For Uv Pdsmentioning
confidence: 99%
“…Reproduced with permission 144. Copyright 2017, Wiley‐VCH and reproduced with permission 145. Copyright 2019, Wiley‐VCH.…”
Section: Heterojunction Integration For Uv Pdsmentioning
confidence: 99%
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