Depletion-mode vertical Ga₂O₃trench MOSFETs fabricated using Ga₂O₃homoepitaxial films grown by halide vapor phase epitaxy

Abstract

We developed depletion-mode vertical Ga2O3 trench metal–oxide–semiconductor field-effect transistors by using n+ contact and n− drift layers. These epilayers were grown on an n+ (001) Ga2O3 single-crystal substrate by halide vapor phase epitaxy. Cu and HfO2 were used for the gate metal and dielectric film, respectively. The mesa width and gate length were approximately 2 and 1 µm, respectively. The devices showed good DC characteristics, with a specific on-resistance of 3.7 mΩ cm2 and clear current modulation. An on–off ratio of approximately 103 was obtained.

Electrical Properties of Sn‐Doped α‐Ga2O3 Films on m‐Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition

“…Gallium oxide (Ga 2 O 3 ) is a promising semiconductor material for various kinds of applications such as transparent conducting layers, thin‐film transistors, ultraviolet sensors, and high‐power devices due to its large bandgap energy reported to be around 5.0 eV . Among the five different types of Ga 2 O 3 polymorphs, β‐gallia‐structured Ga 2 O 3 (β‐Ga 2 O 3 ) is the most thermally stable .…”

Recent progress in deep-depletion diamond metal–oxide–semiconductor field-effect transistors

“…10 c) in on-state. This design is similar to the vertical FinFET designs demonstrated on GaN [55,56,57] and Ga 2 O 3 [58,59,60]. Thanks to the vertical drift region, the surface area of the chip is much smaller than a lateral drift design for equivalent performances.…”

Current State of Ga2O3-Based Electronic and Optoelectronic Devices. Brief Review

“…Sasaki et al in ref. [140] obtained a vertical trench MOSFET on a (001) Ga 2 O 3 substrate by chloride-hydride gas-phase epitaxy. I on /I off is about 10 3 , the switched-on resistance is 3.7 m•cm 2 .…”