“…In our opinion, the distinction between effects arising in the near-surface layer of an epitaxial CdHgTe film owing to its treatment with boron and silver ions is connected with the opposite character of deformations inserting by those ions into the crystal lattice. Really, as was shown in work [27], the implantation of CdHgTe with ions of small radius (such as B + with a radius of 1.17Å [28]) stimulates the contraction of the damaged layer, whereas the implantation of this material with Hg ions with a radius of 1.76Å [28] or Cd ones with a radius of 1.71Å [28] (in our case, are these are Ag ions with a radius of 1.75Å [28]), on the contrary, gives rise to the stretching of the semiconductor near-surface layer. Hence, the squeezing or stretching of the near-surface region in the epitaxial CdHgTe film and, respectively, the stretching or squeezing of deeper layers in this material (i.e.…”