Dependency of p-n junction depth on ion species implanted in HgCdTe

Ebe, H.; Tanaka, Masahiro; Miyamoto, Yoshinari

doi:10.1007/s11664-999-0083-1

Cited by 15 publications

(12 citation statements)

References 17 publications

(14 reference statements)

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“…In our opinion, the distinction between effects arising in the near-surface layer of an epitaxial CdHgTe film owing to its treatment with boron and silver ions is connected with the opposite character of deformations inserting by those ions into the crystal lattice. Really, as was shown in work [27], the implantation of CdHgTe with ions of small radius (such as B + with a radius of 1.17Å [28]) stimulates the contraction of the damaged layer, whereas the implantation of this material with Hg ions with a radius of 1.76Å [28] or Cd ones with a radius of 1.71Å [28] (in our case, are these are Ag ions with a radius of 1.75Å [28]), on the contrary, gives rise to the stretching of the semiconductor near-surface layer. Hence, the squeezing or stretching of the near-surface region in the epitaxial CdHgTe film and, respectively, the stretching or squeezing of deeper layers in this material (i.e.…”

Section: Discussionmentioning

confidence: 66%

Role of Mechanical Stresses at Ion Implantation of CdHgTe Solid Solutions

et al. 2013

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The properties of n-CdxHg1−xTe/CdZnTe (x ≈ 0.223) structures implanted with B + and Ag + ions with an energy of 100 keV to a dose of 3 × 10 13 cm −2 are studied. The software package TRIM_2008 was applied to simulate the ion implantation process. The surface morphology of heterostructures and their optical, mechanical and electrical properties are studied. It is found that the ion irradiation of specimens gives rise to the formation of a characteristic relief on their surface, as well as a layer in the near-surface region, where the optical parameters differ from those in the matrix. The implantation of CdxHg1−xTe epitaxial layers with boron and silver ions with the same energy and to the same dose brings about the formation of a damaged layer, substantially non-uniform by the thickness and the damage character, with maximum mechanical stresses that differ by two orders of magnitude. The values of the crystal lattice contraction coefficient β and the mechanical stresses σmax in the region of radiation-induced disordering in the solid solution are determined. The influence of mechanical stresses in the doped layer on the defect redistribution and the formation of properties of Cd0.223Hg0.777Te after the implantation is discussed.

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Section: Discussionmentioning

confidence: 66%

Role of Mechanical Stresses at Ion Implantation of CdHgTe Solid Solutions

et al. 2013

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“…At the same time, knowing that the deformation accumulation is found to lead to the topological instability of the irradiated surface [12] and being based on our investigations we can assume that the deformation fields appearing upon implantation of the studied heterostructure are a significant factor of the observed transformation of its surface. As we know, the deformation sign is dependent on the ratio of ionic radii of the matrix atoms and introduced impurity [14] (see inset Fig. 3).…”

Section: Figurementioning

confidence: 87%

“…Weak chemical bonds in material under study define the high concentration of electrically active intrinsic defects in accordance with the defect reaction Hg i + V Hg = Hg Hg [14]. Note that the intrinsic defects, as well as ions, being introduced in MCT, demonstrate high diffusion ability.…”

Section: Figurementioning

confidence: 96%

Nano‐scale pattern formation on the surface of HgCdTe produced by ion bombardment

Smirnov

Gudymenko

Kladko

et al. 2015

Phys. Status Solidi C

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Presented in this work are the results concerning formation of nano‐scale patterns on the surface of a ternary compound Hg1–xCdxTe (x ∼ 0.223). Modification of this ternary chalcogenide semiconductor compound was performed using the method of oblique‐incidence ion bombardment with silver ions, which was followed by low‐temperature treatment. The energy and dose of implanted ions were 140 keV and 4.8×1013 cm‐2, respectively. Atomic force microscopy methods were used for the surface topography characterization. The structural properties of MCT‐based structure was analyzed using double and triple crystal X‐ray diffraction to monitor the disorder and strain of the implanted region as a function of processing conditions. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The deformation sign is dependent on the ratio of ionic radii r + of the matrix atoms and introduced impurity [21]. Implantation with ions of small radius (such as B + , r B ~ 0.97 Ǻ) stimulates the compression of the damaged layer, whereas the implantation with ions of radius comparable with that of Hg (in our case, these are Ag + ions, r Ag ~ 1.44 Ǻ, r Hg ~ 1.55 Ǻ) gives rise to tensile stress in the damaged layer, as confirmed by the X-ray diffraction data obtained in this work and in our previous work [23, 34].…”

Section: Discussionmentioning

confidence: 99%

Ion Beam Nanostructuring of HgCdTe Ternary Compound

et al. 2017

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Systematic study of mercury cadmium telluride thin films subjected to the ion beam bombardment was carried out. The evolution of surface morphology of (111) Hg1 − xCdxTe (x ~ 0.223) epilayers due to 100 keV B+ and Ag+ ion irradiation was studied by AFM and SEM methods. X-ray photoelectron spectroscopy and X-ray diffraction methods were used for the investigation of the chemical compound and structural properties of the surface and subsurface region. It was found that in the range of nanoscale, arrays of holes and mounds on Hg0.777Cd0.223Te (111) surface as well as the polycrystalline Hg1 − xCdxTe cubic phase with alternative compound (x ~ 0.20) have been fabricated using 100 keV ion beam irradiation of the basic material. Charge transport investigation with non-stationary impedance spectroscopy method has shown that boron-implanted structures are characterized by capacity-type impedance whereas for silver-implanted structures, an inductive-type impedance (or “negative capacitance”) is observed. A hybrid system, which integrates the nanostructured ternary compound (HgCdTe) with metal-oxide (Ag2O) inclusions, was fabricated by Ag+ ion bombardment. The sensitivity of such metal-oxide-semiconductor hybrid structure for sub-THz radiation was detected with NEP ~ 4.5 × 10−8 W/Hz1/2at ν ≈ 140 GHz and 296 K without amplification.

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Dependency of p-n junction depth on ion species implanted in HgCdTe

Cited by 15 publications

References 17 publications

Role of Mechanical Stresses at Ion Implantation of CdHgTe Solid Solutions

Role of Mechanical Stresses at Ion Implantation of CdHgTe Solid Solutions

Nano‐scale pattern formation on the surface of HgCdTe produced by ion bombardment

Ion Beam Nanostructuring of HgCdTe Ternary Compound

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