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The results of X-ray, scanning electron microscopy and atomic force microscopy studies of near-surface regions of (111) Hg1−xCdxTe (x = 0.223) structures are presented. These structures were obtained by low-energy implantation with boron and silver ions. TRIM calculation of the depth dependences of impurity concentration and implantation-induced mechanical stresses in the layer near-surface regions has revealed that the low-energy implantation of HgCdTe solid solution with elements of dierent ionic radiuses (B + and Ag +) leads to the formation of layers with signicant dierence in thickness (400 nm and 100 nm, respectively), as well as with maximum mechanical stresses diering by two orders of magnitude (1.4×10 3 Pa and 2.2 × 10 5 Pa, respectively). The structural properties of the Hg1−xCdxTe epilayers were investigated using X-ray high-resolution reciprocal space mapping.